CS60-16IO1 [IXYS]

Phase Control Thyristor; 相位控制晶闸管

CS60-16IO1


型号：	CS60-16IO1
厂家：	IXYS CORPORATION
描述：	Phase Control Thyristor 相位控制晶闸管栅极触发装置可控硅整流器
文件：	总2页 (文件大小：49K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

CS 60

Phase Control Thyristor

V_RRM= 1200-1600 V

I_T(RMS)= 75 A

I_T(AV)M= 48 A

Preliminary Data Sheet

PLUS247

V_RSM

V_DSM

V_RRM

V_DRM

Type

A

C

C

A

G

V

V

G

A (TAB)

1300

1500

1700

1200 CS 60-12io1

1400 CS 60-14io1

1600 CS 60-16io1

C = Cathode, A = Anode, G = Gate

Symbol

Test Conditions

Maximum Ratings

Features

I_T(RMS)

I_T(AV)M

T_VJ= T_VJM

T_C= 105°C; 180° sine

(lead current limit)

75

48

A

A

z

Thyristor for line frequency

International standard package

z

JEDEC TO-247

Planar passivated chip

Long-term stability of blocking

currents and voltages

I_TSM

T_VJ= 45°C;

V_R= 0 V

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

1500

1600

A

A

z

z

T_VJ= T_VJM

V_R= 0 V

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

1350

1450

A

A

i²t

T_VJ= 45°C

V_R= 0 V

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

11,200

10,750

A²s

A²s

Applications

T_VJ= T_VJM

V_R= 0 V

t = 10 ms (50 Hz), sine

t = 8.3 ms (60 Hz), sine

9100

8830

A²s

A²s

z

Motor control

Power converter

AC power controller

Switch-mode and resonant mode

z

(di/dt)_cr

T_VJ= T_VJM

repetitive, I_T= 60 A

150

A/µs

z

f = 50Hz, t_P=200µs

V_D= 2/3 V_DRM

I_G= 0.3 A

z

power supplies

Light and temperature control

non repetitive, I_T= I_T(AV)M

V_DR= 2/3 V_DRM

500

A/µs

V/µs

z

di_G/dt = 0.3 A/µs

(dv/dt)_cr

P_GM

T_VJ= T_VJM

;

1000

R_GK= ∞; method 1 (linear voltage rise)

Advantages

T_VJ= T_VJM

I_T= I_T(AV)M

t_P= 30 µs

t_P= 300 µs

10

5

0.5

W

W

W

z

Easy to mount

Space and weight savings

z

P_G(AV)

V_RGM

z

Simple mounting

10

V

T_VJ

T_VJM

T_stg

-40...+140

140

-40...+125

°C

°C

°C

F_C

Mounting Force

20...120/4.5...27

6

N/lbs

g

Weight

Data according to IEC 60747

IXYS reserves the right to change limits, test conditions and dimensions

98811A (1/03)

© 2003 IXYS All rights reserved

CS 60

PLUS247^TMOutline

Symbol

I_R, I_D

Test Conditions

Characteristic Values

T_VJ= T_VJM; V_R= V_RRM; V_D= V_DRM

T_VJ= 25°C

≤

≤

10 mA

0.2 mA

V_T

I_T= 100 A; T_VJ= 25°C

≤

1.4

V

V_T0

r_T

For power-loss calculations only (T_VJ= 125°C)

0.85

3.7 mΩ

V

V_GT

I_GT

V_D= 6 V;

V_D= 6 V;

T_VJ= 25°C

T_VJ= -40°C

T_VJ= 25°C

≤

≤

≤

≤

1.5

1.6

100 mA

200 mA

V

V

T

_VJ= -40°C

V_GD

I_GD

T_VJ= T_VJM

;

V_D= 2/3 V_DRM

≤

≤

0.2

10 mA

V

Terminals: 1 - Cathode

2 - Anode

3 - Gate

Tab - Anode

I_L

T_VJ= 25°C; t_P= 10 µs

I_G= 0.45 A; di_G/dt = 0.45 A/µs

≤

450 mA

Dim.

Millimeter

Min. Max.

Inches

Min. Max.

A

A₁

A₂

4.83

2.29

1.91

5.21

2.54

2.16

.190 .205

.090 .100

.075 .085

I_H

T_VJ= 25°C; V_D= 6 V; R_GK= ∞

≤

≤

200 mA

t_gd

T_VJ= 25°C; V_D= 1/2 V_DRM

I_G= 0.45 A; di_G/dt = 0.45 A/µs

2

µs

b

b₁

b₂

1.14

1.91

2.92

1.40

2.13

3.12

.045 .055

.075 .084

.115 .123

R_thJC

R_thJK

DC current

DC current

0.32 K/W

0.47 K/W

C

D

E

0.61

20.80 21.34

15.75 16.13

0.80

.024 .031

.819 .840

.620 .635

e

L

L1

5.45 BSC

19.81 20.32

.215 BSC

.780 .800

.150 .170

3.81

4.32

Q

R

5.59

4.32

6.20

4.83

.220 0.244

.170 .190

Leads and tab are solder plated.

© 2003 IXYS All rights reserved

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