H11AV3X-SMT&R [ISOCOM]
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| 型号： | H11AV3X-SMT&R |
| 厂家： | 
ISOCOM COMPONENTS |
| 描述： | 暂无描述 光电 输出元件 |
| 文件： | 总3页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
H11AV1X, H11AV2X, H11AV3X
H11AV1, H11AV2, H11AV3
OPTICALLY COUPLED
ISOLATOR
PHOTOTRANSISTOR OUTPUT
Dimensions in mm
APPROVALS
2.54
z
ULrecognised,FileNo.E91231
Package System " GG "
1
2
6
5
7.0
6.0
'X'SPECIFICATIONAPPROVALS
z
VDE 0884 in 3 available lead form : -
3
4
- STD
- G form
1.2
-SMDapprovedtoCECC00802
CertifiedtoEN60950by
Nemko-CertificateNo.P01102464
7.62
6.62
7.62
z
4.0
3.0
13°
Max
0.5
3.0
DESCRIPTION
0.26
3.35
0.5
The H11AV series of optically coupled
isolators consist of infrared light emitting diode
and NPN silicon photo transistor in a standard
6 pin dual in line plastic package.
ABSOLUTEMAXIMUMRATINGS
(25°Cunlessotherwisespecified)
FEATURES
z
Options :-
Storage Temperature
OperatingTemperature
Lead SolderingTemperature
-55°Cto+150°C
-55°Cto+100°C
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
Tape&reel - add SMT&R after part no.
High Isolation Voltage (5.3kVRMS ,7.5kVPK
High BVCEO (70V min)
All electrical parameters 100% tested
Custom electrical selections available
(1/16inch(1.6mm)fromcasefor10secs) 260°C
z
z
z
z
)
INPUTDIODE
ForwardCurrent
ReverseVoltage
Power Dissipation
60mA
6V
105mW
APPLICATIONS
z
z
z
z
DC motor controllers
Industrial systems controllers
Measuring instruments
Signal transmission between systems of
different potentials and impedances
OUTPUTTRANSISTOR
Collector-emitterVoltageBVCEO
Collector-baseVoltageBV
Emitter-collectorVoltageBCVBOECO
CollectorCurrent
70V
70V
6V
50mA
OPTION G
OPTION SM
SURFACEMOUNT
Power Dissipation
160mW
7.62
POWERDISSIPATION
Total Power Dissipation
(deratelinearly2.67mW/°Cabove25°C)
200mW
0.6
0.1
1.25
0.75
0.26
10.16
10.46
9.86
ISOCOMCOMPONENTS2004LTD
Unit25B, ParkViewRoadWest,
ParkView Industrial Estate, Brenda Road
Hartlepool,Cleveland,TS251UD
Tel:(01429)863609 Fax:(01429)863581
17/7/08
DB92055
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
PARAMETER
MIN TYP MAX UNITS
TEST CONDITION
Input
Forward Voltage (VF)
1.2
1.5
10
V
IF = 10mA
ReverseCurrent(IR)
μA
V
VR =6V
Output
Collector-emitter Breakdown (BV
)
70
IC = 1mA
( note C2EO)
Collector-base Breakdown (BVCBO
Emitter-collector Breakdown (BVECO
Collector-emitter Dark Current (ICEO
)
70
6
V
V
nA
IC = 100μA
IE = 100μA
VCE = 10V
)
)
50
Coupled Current Transfer Ratio (CTR)
H11AV1
100
50
20
300
%
%
%
10mA IF , 10V VCE
10mA IF , 10V VCE
10mA IF , 10V VCE
H11AV2
H11AV3
Collector-emitter Saturation VoltageVCE(SAT)
0.4
V
20mA IF , 2mA IC
Input to Output Isolation Voltage VISO 5300
7500
VRMS
VPK
See note 1
See note 1
Input-output Isolation Resistance RISO 5x1010
Ω
VIO = 500V (note 1)
RiseTime,tr
FallTime,tf
2
2
μs
μs
VCC =5V, fig1
IF=10mA,RL =75Ω
Note 1
Note 2
Measured with input leads shorted together and output leads shorted together.
Special Selections are available on request. Please consult the factory.
VCC
Input
ton
toff
RL = 75Ω
tf
tr
Output
Output
10%
10%
90%
90%
FIG 1
DB92055m-AAS/A3
17/7/08
Collector Power Dissipation vs. Ambient Temperature
Collector Current vs. Collector-emitter Voltage
200
TA = 25°C
50
50
150
100
40
30
30
20
15
20
10
50
0
10
IF = 5mA
0
0
2
4
6
8
10
-30
0
25
50
75
100 125
Collector-emitter voltage VCE ( V )
Ambient temperature TA ( °C )
Collector-emitter Saturation
Voltage vs. Ambient Temperature
Forward Current vs. Ambient Temperature
0.28
0.24
80
70
I = 20mA
IFC = 2mA
60
0.20
0.16
50
40
0.12
0.08
30
20
0.04
0
10
0
-30
0
25
50
75
100
-30
0
25
50
75
100 125
Ambient temperature TA ( °C )
Ambient temperature TA ( °C )
Relative Current Transfer Ratio
vs. Ambient Temperature
Relative Current Transfer Ratio
vs. Forward Current
1.4
1.5
1.0
IF = 10mA
1.2
V
CE = 10V
1.0
0.8
0.6
0.4
0.5
0
V
= 10V
TACE= 25°C
0.2
0
1
2
5
10
20
50
-30
0
25
50
75
100
Ambient temperature TA ( °C )
Forward current IF (mA)
DB92055m-AAS/A3
17/7/08
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