H11AV3XG [ETC]

NPN-OUTPUT DC-INPUT OPTOCOUPLER ; NPN输出DC- INPUT光电耦合器\n
H11AV3XG
型号: H11AV3XG
厂家: ETC    ETC
描述:

NPN-OUTPUT DC-INPUT OPTOCOUPLER
NPN输出DC- INPUT光电耦合器\n

光电 输出元件 输入元件
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中文:  中文翻译
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H11AV1X, H11AV2X, H11AV3X  
H11AV1, H11AV2, H11AV3  
OPTICALLY COUPLED  
ISOLATOR  
PHOTOTRANSISTOR OUTPUT  
APPROVALS  
Dimensions in mm  
2.54  
l
UL recognised, File No. E91231  
'X' SPECIFICATION APPROVALS  
1
6
5
4
7.0  
6.0  
l
VDE 0884 in 3 available lead forms : -  
- STD  
2
3
- G form  
1.2  
3.0  
- SMD approved to CECC 00802  
Certified to EN60950 by the following  
Test Bodies :-  
l
7.62  
6.62  
7.62  
0.26  
4.0  
3.0  
Nemko - Certificate No. P96101299  
Fimko - Registration No. 190469-01..22  
Semko - Reference No. 9620076 01  
Demko - Reference No. 305567  
13°  
Max  
0.5  
3.35  
0.5  
DESCRIPTION  
The H11AV series of optically coupled  
isolators consist of infrared light emitting diode  
and NPN silicon photo transistor in a standard  
6 pin dual in line plastic package.  
ABSOLUTE MAXIMUM RATINGS  
(25°C unless otherwise specified)  
Storage Temperature  
Operating Temperature  
-55°C to + 150°C  
-55°C to + 100°C  
FEATURES  
Lead Soldering Temperature  
(1/16 inch (1.6mm) from case for 10 secs) 260°C  
l
Options :-  
10mm lead spread - add G after part no.  
Surface mount - add SM after part no.  
Tape&reel - add SMT&R after part no.  
High Isolation Voltage (5.3kVRMS ,7.5kVPK  
High BVCEO (70V min)  
INPUT DIODE  
l
l
l
l
)
Forward Current  
Reverse Voltage  
Power Dissipation  
60mA  
6V  
105mW  
All electrical parameters 100% tested  
Custom electrical selections available  
APPLICATIONS  
l
l
l
l
DC motor controllers  
Industrial systems controllers  
Measuring instruments  
Signal transmission between systems of  
different potentials and impedances  
OUTPUT TRANSISTOR  
Collector-emitter Voltage BVCEO  
Collector-base Voltage BVCBO  
Emitter-collector Voltage BVECO  
Power Dissipation  
70V  
70V  
6V  
160mW  
OPTION G  
OPTION SM  
SURFACEMOUNT  
7.62  
POWER DISSIPATION  
Total Power Dissipation  
(derate linearly 2.67mW/°C above 25°C)  
200mW  
0.6  
0.1  
1.25  
0.75  
0.26  
10.46  
9.86  
10.16  
ISOCOM INC  
1024 S.GreenvilleAve,Suite240,  
Allen, TX75002 USA  
Tel:(214)495-0755 Fax:(214)495-0901  
e-mail info@isocom.com  
ISOCOM COMPONENTS LTD  
Unit 25B, Park View Road West,  
Park View Industrial Estate, Brenda Road  
Hartlepool, Cleveland, TS25 1YD  
Tel: (01429) 863609 Fax :(01429) 863581  
http://www.isocom.com  
7/12/00  
DB92055m-AAS/A1  
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )  
PARAMETER  
MIN TYP MAX UNITS  
TEST CONDITION  
Input  
Forward Voltage (VF)  
Reverse Voltage (VR)  
Reverse Current (IR)  
1.2  
1.5  
10  
V
V
µA  
IF = 10mA  
IR = 10µA  
VR = 6V  
6
Output  
Collector-emitter Breakdown (BV  
)
70  
V
IC = 1mA  
( note C2EO)  
Collector-base Breakdown (BVCBO  
Emitter-collector Breakdown (BVECO  
Collector-emitter Dark Current (ICEO  
)
70  
6
V
V
nA  
IC = 100µA  
IE = 100µA  
VCE = 10V  
)
)
50  
Coupled Current Transfer Ratio (CTR)  
H11AV1  
100  
50  
20  
300  
%
%
%
10mA IF , 10V VCE  
10mA IF , 10V VCE  
10mA IF , 10V VCE  
H11AV2  
H11AV3  
Collector-emitter Saturation VoltageVCE(SAT)  
0.4  
V
20mA IF , 2mA IC  
Input to Output Isolation Voltage VISO 5300  
7500  
VRMS  
VPK  
See note 1  
See note 1  
Input-output Isolation Resistance RISO 5x1010  
VIO = 500V (note 1)  
Turn-on Time  
Turn-off Time  
ton  
toff  
10  
10  
µs  
µs  
VCC = 10V , fig 1  
IC= 2mA, RL = 100Ω  
Note 1  
Note 2  
Measured with input leads shorted together and output leads shorted together.  
Special Selections are available on request. Please consult the factory.  
VCC  
Input  
ton  
toff  
RL = 100  
tf  
tr  
Output  
Output  
10%  
10%  
90%  
90%  
FIG 1  
7/12/00  
DB92055m-AAS/A1  
Collector Power Dissipation vs. Ambient Temperature  
Collector Current vs. Collector-emitter Voltage  
200  
TA = 25°C  
50  
50  
150  
100  
40  
30  
30  
20  
15  
20  
10  
50  
0
10  
IF = 5mA  
0
0
2
4
6
8
10  
-30  
0
25  
50  
75  
100 125  
Collector-emitter voltage VCE ( V )  
Ambient temperature TA ( °C )  
Collector-emitter Saturation  
Voltage vs. Ambient Temperature  
Forward Current vs. Ambient Temperature  
0.28  
0.24  
80  
70  
I = 20mA  
IFC = 2mA  
60  
0.20  
0.16  
50  
40  
0.12  
0.08  
30  
20  
0.04  
0
10  
0
-30  
0
25  
50  
75  
100  
-30  
0
25  
50  
75  
100 125  
Ambient temperature TA ( °C )  
Ambient temperature TA ( °C )  
Relative Current Transfer Ratio  
vs. Ambient Temperature  
Relative Current Transfer Ratio  
vs. Forward Current  
1.4  
1.2  
1.5  
1.0  
IF = 10mA  
VCE = 10V  
1.0  
0.8  
0.6  
0.4  
0.5  
0
V
= 10V  
TACE= 25°C  
0.2  
0
1
2
5
10  
20  
50  
-30  
0
25  
50  
75  
100  
Ambient temperature TA ( °C )  
Forward current IF (mA)  
7/12/00  
DB92055m-AAS/A1  

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