H11B1 [VISHAY]
Optocoupler, Photodarlington Output, High Gain, With Base Connection; 光电耦合器，光电复合输出，高增益，与基地连接
| 型号： | H11B1 |
| 厂家： | 
VISHAY |
| 描述： | Optocoupler, Photodarlington Output, High Gain, With Base Connection |
| 文件： | 总7页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Optocoupler, Photodarlington Output, High Gain, With Base
Connection
Features
• Isolation test voltage, 5300 V
RMS
• Coupling capacitance, 0.5 pF
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
1
6
A
C
B
C
E
5
4
2
3
NC
Agency Approvals
• UL1577, File No. E52744 System Code J
Pb
e3
i179005
Pb-free
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
Order Information
Part
Remarks
H11B1
CTR > 500 %, DIP-6
CTR > 200 %, DIP-6
CTR > 100 %, DIP-6
H11B2
Description
The H11B1/ H11B2/ H11B3 are industry standard
optocouplers, consisting of a gallium arsenide infra-
red LED and a silicon photodarlington.
H11B3
H11B1-X007
H11B1-X009
H11B2-X009
CTR > 500 %, SMD-6 (option 7)
CTR > 500 %, SMD-6 (option 9)
CTR > 200 %, SMD-6 (option 9)
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
VR
Value
3.0
Unit
V
Reverse voltage
Forward continuous current
Power dissipation
IF
60
mA
mW
Pdiss
100
1.33
Derate linearly from 25 °C
mW/°C
Output
Parameter
Test condition
Symbol
BVCEO
Value
25
Unit
V
Collector-emitter breakdown voltage
Emitter-collector breakdown voltage
Collector-base breakdown voltage
BVECO
BVCBO
7.0
30
V
V
Document Number 83609
Rev. 1.5, 26-Oct-04
www.vishay.com
1
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Parameter
Test condition
Symbol
IC
Value
100
Unit
mA
Collector current (continuous)
Power dissipation
Pdiss
150
2.0
mW
Derate linearly from 25 °C
mW/°C
Coupler
Parameter
Test condition
Symbol
VISO
Value
5300
Unit
Isolation test voltage
between emitter and detector,
refer to standard climate
VRMS
23 °C/50 %RH, DIN 50014
Creepage
Clearance
≥ 7.0
≥ 7.0
175
mm
mm
Comparative tracking index per
DIN IEC 112/VDE 0303, part 1
≥ 1012
≥ 1011
Isolation resistance
VIO = 500 V, Tamb = 25 °C
RIO
RIO
Ptot
Ω
Ω
V
IO = 500 V, Tamb = 100 °C
Total package dissipation (LED
plus detector)
260
mW
Derate linearly from 25 °C
Storage temperature
3.5
mW/°C
°C
Tstg
- 55 to + 150
Operating temperature
Tamb
- 55 to + 100
10
°C
Lead soldering time at 260 °C
sec.
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 50 mA
Part
Symbol
VF
Min
Typ.
1.1
Max
1.5
Unit
V
Forward voltage
H11B1
H11B2
H11B3
VF
VF
IR
1.1
1.1
1.5
1.5
10
V
V
IF = 10 mA
R = 3.0 V
Reserve current
V
µA
pF
Junction capacitance
VF = 0 V, f = 1.0 mHz
Cj
50
Output
Parameter
Test condition
Symbol
BVCEO
Min
Typ.
Max
Unit
V
Collector-emitter breakdown
voltage
IC = 1.0 mA, IF = 0 mA
30
7.0
30
Emitter-collector breakdown
voltage
IE = 100 µA, IF = 0 mA
IC = 100 µA, IF = 0 mA
VCE = 10 V, IF = 0 mA
BVECO
BVCBO
ICEO
V
V
Collector-base breakdown
voltage
Collector-emitter leakage
current
100
nA
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2
Document Number 83609
Rev. 1.5, 26-Oct-04
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Coupler
Parameter
Test condition
Symbol
VCEsat
Min
Typ.
0.5
Max
1.0
Unit
V
Saturation voltage collector-
emitter
IC = 1.0 mA, IC = 1.0 mA
Capacitance (input-output)
CIO
pF
Current Transfer Ratio
Parameter
Test condition
Part
Symbol
Min
500
Typ.
Max
Unit
%
DC Current Transfer Ratio
VCE = 5.0 V, IF = 1.0 mA
H11B1
CTRDC
CTRDC
CTRDC
H11B2
H11B3
200
100
%
%
Switching Characteristics
Parameter
Test condition
Symbol
ton
Min
Typ.
5.0
Max
Unit
Switching times
IF = 5.0 mA, VCE = 10 V, RL = 100 Ω
µs
toff
30
µs
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
1.4
4.0
3.5
Normalized to:
Vce = 5 V
IF = 1 mA
1. 3
Ta = -55°C
Ta = 25°C
3.0
1.2
1.1
2.5
2.0
Vce = 5 V
Vce = 1 V
1.0
0.9
1.5
1.0
0.5
0.0
Ta = 100°C
0.8
0.7
.1
1
10
100
.1
1
10
100
IF - LED Current - mA
IF - Forward Current - mA
ih11b1_01
ih11b1_02
Figure 1. Forward Voltage vs. Forward Current
Figure 2. Normalized Non-Saturated and Saturated CTRCE vs.
LED Current
Document Number 83609
Rev. 1.5, 26-Oct-04
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3
H11B1/ H11B2/ H11B3
Vishay Semiconductors
100
80
60
Normalized to:
Vce = 5 V
Vce = 5 V
Vce = 1V
Vcc = 5V
1.0 kΩ
Vth = 1.5 V
10
1
IF = 2 mA
220 ıΩˇ
470 Ω
40
20
.1
100 Ω
.01
0
100
.1
1
10
0
5
10
15
20
IF - LED Current - mA
IF - LED Current - mA
ih11b1_03
ih11b1_06
Figure 3. Normalized Non-Saturated and Saturated ICE vs. LED
Current
Figure 6. Low to High Propagation Delay vs. Collector Load
Resistance and LED Current
10
20
Normalized to:
IF = 10 mA
Vce = 5 V
Vce = 5 V
Vce = 1V
1kΩ
Vcc = 5 V
Vth = 1.5 V
1
.1
15
10
100Ω
.01
5
.001
0
100
.1
1
10
0
5
10
15
20
IF - LED Current - mA
IF - LED Current - mA
ih11b1_04
ih11b1_07
Figure 4. Normalized Non-Saturated and Saturated Collector-
Emitter Current vs. LED Current
Figure 7. High to low Propagation Delay vs. Collector Load
Resistance and LED Current
10000
Vce = 5 V
8000
6000
I
F
t
R
D
4000
t
V
O
Vce = 1 V
t
PLH
2000
V
= 1.5 V
TH
0
.01
t
t
t
S
F
PHL
.1
1
10
100
Ib - Base Current - µA
ih11b1_05
ih11b1_08
Figure 5. Non-Saturated and Saturated HFE vs. Base Current
Figure 8. Switching Waveform
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Document Number 83609
Rev. 1.5, 26-Oct-04
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Figure 9. Switching Schematic
V
= 10 V
CC
F=10 KHz,
DF=50%
R
L
V
O
I
=5 mA
F
ih11b1_09
Package Dimensions in Inches (mm)
pin one ID
2
1
3
.248 (6.30)
.256 (6.50)
ISO Method A
4
5
6
.335 (8.50)
.343 (8.70)
.300 (7.62)
typ.
.048 (0.45)
.022 (0.55)
.039
(1.00)
Min.
.130 (3.30)
.150 (3.81)
18°
4°
.114 (2.90)
.130 (3.0)
typ.
.031 (0.80) min.
3°–9°
.010 (.25)
typ.
.031 (0.80)
.035 (0.90)
.018 (0.45)
.022 (0.55)
.300–.347
(7.62–8.81)
.100 (2.54) typ.
i178004
Document Number 83609
Rev. 1.5, 26-Oct-04
www.vishay.com
5
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Option 7
Option 9
.300 (7.62)
TYP.
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.331 (8.4)
MIN.
15° max.
18494
.315 (8.00)
min.
.406 (10.3)
MAX.
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6
Document Number 83609
Rev. 1.5, 26-Oct-04
H11B1/ H11B2/ H11B3
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83609
Rev. 1.5, 26-Oct-04
www.vishay.com
7
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