IPA80R310CE [ISC]
isc N-Channel MOSFET Transistor;
| 型号： | IPA80R310CE |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc N-Channel MOSFET Transistor |
| 文件： | 总2页 (文件大小：261K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
IPA80R460CE
·FEATURES
·With TO-220F package
·Low input capacitance and gate charge
·Reduced switching and conduction losses
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS
·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGSS
ID
PARAMETER
VALUE
800
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Drain Current-Continuous @Tc=25℃
10.8
6.8
A
(VGS at 10V)
Tc=100℃
IDM
Drain Current-Single Pulsed
33
34
A
PD
Total Dissipation @TC=25℃
W
℃
℃
Tj
Max. Operating Junction Temperature
Storage Temperature
150
-55~150
Tstg
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
℃/W
℃/W
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
3.7
80
1
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
INCHANGE Semiconductor
Isc N-Channel MOSFET Transistor
IPA80R460CE
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
BVDSS
VGS(th)
RDS(on)
IGSS
PARAMETER
CONDITIONS
MIN
800
2.1
TYP
390
1.0
MAX
UNIT
V
Drain-Source Breakdown Voltage VGS=0V; ID=0.25mA
Gate Threshold Voltage
VDS= VGS; ID=0.68mA
VGS= 10V; ID=7.1A
VGS=±20V;VDS= 0V
3.9
460
V
Drain-Source On-Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current
Diode forward voltage
mΩ
μA
μA
V
±0.1
VDS= 800V; VGS= 0V;Tj=25℃
VDS= 800V; VGS= 0V; Tj=150℃
1
100
IDSS
VSDF
ISD=10.8A, VGS = 0V
2
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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