BUX47A [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BUX47A |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：77K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUX47A
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 450V (Min)
·Fast Switching Speed
APPLICATIONS
Designed for high voltage, fast switching applications.
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCER
VCES
VCEO
VEBO
IC
PARAMETER
VALUE
1000
900
450
7
UNIT
V
Collector-Emitter Voltage
(RBE= 10Ω)
Collector-Emitter Voltage
(VBE= 0)
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current-Continuous
Collector Current-Peak tp< 5ms
Base Current-Continuous
Base Current-peak tp< 5ms
9
A
ICM
15
A
IB
8
A
IBM
10
A
Collector Power Dissipation
@TC=25℃
PC
125
175
-65~175
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.2
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUX47A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
CONDITIONS
IC= 0.2A; IB= 0; L= 25mH
IE= 50mA; IC= 0
MIN
450
7
MAX
UNIT
V
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
30
1.5
3.0
1.6
V
IC= 5A; IB= 1A
V
VCE
(sat)-1
IC= 8A; IB= 2.5A
V
VCE(
sat)-2
IC= 5A; IB= 1A
V
VBE
(sat)
VCE= 850V; RBE= 10Ω
VCE= 850V; RBE= 10Ω; TC=125℃
0.4
3
ICER
mA
mA
mA
VCE=850V; VBE= -2.5V
0.15
1.5
ICEV
Collector Cutoff Current
VCE=850V; VBE= -2.5V; TC=125℃
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
1.0
Switching times Resistive Load
Turn-on Time
Storage Time
Fall Time
0.7
3.0
0.8
μs
μs
μs
ton
IC= 5A; IB1=-IB2= 1A; VCC= 150V
ts
tf
isc Website：www.iscsemi.cn
相关型号：
BUX47LEADFREE
Power Bipolar Transistor, 9A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL
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