BUH1015HI [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BUH1015HI |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUH1015HI
DESCRIPTION
·With TO-3PML package.
·High voltage.
·High switching speed.
APPLICATIONS
·Horizontal deflection for colour TV
and monitors.
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PML) and symbol
3
Emitter
Absolute maximum ratings (Ta=25℃)
SYMBO
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector current -peak
Base current
CONDITIONS
VALU
1500
700
10
UNIT
V
Open emitter
Open base
V
Open collector
V
14
A
ICM
tp<5ms
18
A
IB
8
A
IBM
Base current -peak
tp<5ms
11
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
70
W
℃
℃
Tj
150
-65~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUH1015HI
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
VCEO(SUS)
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
10
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
IE=10mA; IC=0
Collector-emitter sustaining voltage IC=100mA; IB=0
Collector-emitter saturation voltage IC=10A; IB=2A
700
V
1.5
1.5
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=10A; IB=2A
V
VCE=1500V ;VBE=0
Tj=125℃
0.2
2
mA
mA
IEBO
VEB=5V; IC=0
0.1
14
IC=10A ; VCE=5V
Tj=100℃
7
5
hFE
Switchines sistive load
ts
tf
Storage time
Fall time
1.5
μs
IC=10A;IB1=2A;IB2=-6A;
VCC=400V
110
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal resistance junction case
1.8
℃/W
Rth j-case
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BUH1015HI
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
©2020 ICPDF网 联系我们和版权申明