BDX86C [ISC]
Silicon PNP Darlington Power Transistor; 硅PNP达林顿功率晶体管
| 型号： | BDX86C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Darlington Power Transistor |
| 文件： | 总2页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDX86/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 750(Min)@ IC= -3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDX86; -60V(Min)- BDX86A
-80V(Min)- BDX86B; -100V(Min)- BDX86C
·Complement to Type BDX85/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
BDX86
-45
BDX86A
BDX86B
BDX86C
BDX86
-60
-80
VCBO
Collector-Base Voltage
V
-100
-45
BDX86A
BDX86B
BDX86C
-60
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
-80
-100
-5
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
-10
-15
A
-100
100
200
-65~200
mA
W
℃
℃
Collector Power Dissipation
@ TC=25℃
PC
TJ
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.75
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDX86/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
-45
TYP.
MAX
UNIT
BDX86
BDX86A
BDX86B
BDX86C
-60
Collector-Emitter
Sustaining Voltage
IC= -100mA; IB= 0
V
-80
-100
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BDX86
IC= -4A; IB= -16mA
IC= -8A; IB= -40mA
IC= -8A; IB= -80mA
IC= -4A; VCE= -3V
-2.0
-4.0
-4.0
-2.8
V
V
V
V
)-1
sat
VCE(
)-2
sat
VBE(
)
sat
VBE(
)
on
VCB= -45V; IE= 0
VCB= -45V; IE= 0TC= 150℃
-0.5
-5.0
VB= -60V; IE= 0
VB= -60V; IE= 0; TC= 150℃
-0.5
-5.0
BDX86A
Collector
ICBO
mA
Cutoff Current
VCB= -80V; IE= 0
VCB= -80V; IE= 0; TC= 150℃
-0.5
-5.0
BDX86B
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TC= 150℃
-0.5
-5.0
BDX86C
BDX86
VCE= -22V; IB= 0
VCE= -30V; IB= 0
VCE= -40V; IB= 0
BDX86A
Collector
ICEO
-1.0
mA
mA
Cutoff Current
BDX86B
BDX86C
Emitter Cutoff Current
DC Current Gain
VCE= -50V; IB= 0
IEBO
hFE-1
hFE-2
hFE-3
VEB= -5V; IC= 0
-2.0
IC= -3A; VCE= -3V
IC= -4A; VCE= -3V
IC= -8A; VCE= -4V
1000
750
DC Current Gain
18000
DC Current Gain
200
2
isc Website：www.iscsemi.cn
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