BDX87C [STMICROELECTRONICS]
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS; 互补硅功率达林顿晶体管
| 型号： | BDX87C |
| 厂家： | 
ST |
| 描述： | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BDX87C
BDX88C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
■
SGS-THOMSON PREFERRED SALESTYPES
DESCRIPTION
The BDX87C is a silicon epitaxial-base NPN
power transistors in monolithic Darlington
configuration and are mounted in Jedec TO-3
metal case. They are intented for use in power
linear and switching applications.
1
The complementary PNP types is the BDX88C.
2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 6 K Ω
R2 Typ. = 55 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
NPN
PNP
BDX87C
BDX88C
100
VCBO
VCEO
VEBO
IC
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (IB = 0)
Emitter-base Voltage (IC = 0)
Collector Current
V
V
100
5
V
12
A
ICM
IB
Collector Peak Current (repetitive)
Base Current
18
A
0.2
A
o
Ptot
Tstg
Tj
Total Dissipation at Tc ≤ 25 C
120
W
oC
oC
Storage Temperature
-65 to 200
200
Max. Operating Junction Temperature
1/4
June 1997
BDX87C-BDX88C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
1.45
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
VCB = 100 V
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
0.5
5
mA
mA
o
VCB = 100 V
T case = 150 C
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
VCB = 50 V
1
mA
mA
V
Emitter Cut-off Current VEB = 5 V
(IC = 0)
1
VCEO(sus) Collector-Emitter
Sustaining Voltage
(IB = 0)
IC = 100 mA
100
VCE(sat)
Collector-emitter
Saturation Voltage
IC = 6 A
IC = 12 A
IB = 24 mA
IB = 120 mA
2
3
V
V
VBE(sat)
Base-emitter
IC = 12 A
IB =120 mA
4
V
Saturation Voltage
VBE
hFE
Base-emitter Voltage
DC Current Gain
IC = 6 A
VCE = 3 V
2.8
V
IC = 5 A
IC = 6 A
IC = 12 A
VCE = 3 V
VCE = 3 V
VCE = 3 V
1000
750
100
18000
1.8
VF
hfe
Parallel-diode Forward IF = 3 A
Voltage
V
V
IF = 8 A
2.5
25
Small SignalCurrent
Gain
IC = 5 A
f = 1MHz
VCE = 3 V
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
2/4
BDX87C-BDX88C
TO-3 MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
11.00
0.97
TYP.
MAX.
13.10
1.15
MIN.
0.433
0.038
0.059
0.327
0.748
0.421
0.649
0.984
0.157
1.515
1.187
MAX.
0.516
0.045
0.065
0.351
0.787
0.437
0.677
1.023
0.161
1.547
1.193
A
B
C
D
E
G
N
P
R
U
V
1.50
1.65
8.32
8.92
19.00
10.70
16.50
25.00
4.00
20.00
11.10
17.20
26.00
4.09
38.50
30.00
39.30
30.30
A
D
P
C
G
R
P003F
3/4
BDX87C-BDX88C
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
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