BDW52C [ISC]
Silicon PNP Power Transistor; 硅PNP功率晶体管
| 型号： | BDW52C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：203K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BDW52/A/B/C
DESCRIPTION
·Collector Current -IC= -15A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -45V(Min)- BDW52; -60V(Min)- BDW52A
-80V(Min)- BDW52B; -100V(Min)- BDW52C
·Complement to Type BDW51/A/B/C
APPLICATIONS
·Designed for use in power linear and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-45
UNIT
BDW52
BDW52A
BDW52B
BDW52C
BDW52
-60
Collector-Base
Voltage
VCBO
V
-80
-100
-45
BDW52A
BDW52B
BDW52C
-60
Collector-Emitter
Voltage
VCEO
V
-80
-100
-5
VEBO
IC
ICM
IB
Emitter-Base Voltage
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
-15
-20
A
-7
A
Collector Power Dissipation
@ TC=25℃
PC
TJ
125
200
-65~200
W
℃
℃
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.4
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BDW52/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
BDW52
-45
BDW52A
BDW52B
BDW52C
-60
-80
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= -100mA; IB= 0
V
-100
VCE(sat)-1
VCE(sat)-2
VBE(sat)
VBE(
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
BDW52
IC= -5A; IB= -0.5A
IC= -10A; IB= -2.5A
IC= -10A; IB=- 2.5A
IC= -5A; VCE= -4V
-1.0
-3.0
-2.5
-1.5
V
V
V
V
)
on
V
CB= -45V; IE= 0
VCB= -45V; IE= 0; TC= 150℃
CB= -60V; IE= 0
VCB= -60V; IE= 0; T= 150℃
CB= -80V; IE= 0
-0.5
-5.0
V
-0.5
-5.0
BDW52A
Collector
ICBO
mA
Cutoff Current
V
-0.5
-5.0
BDW52B
CB= -80V; IE= 0; TC= 150℃
VCB= -100V; IE= 0
VCB= -100V; IE= 0; TC= 150℃
-0.5
-5.0
BDW52C
BDW52
VCE= -22V; IB= 0
VCE= -30V; IB= 0
VCE= -40V; IB= 0
BDW52A
Collector
ICEO
-1.0
mA
mA
Cutoff Current
BDW52B
BDW52C
Emitter Cutoff Current
DC Current Gain
VCE= -50V; IB= 0
IEBO
hFE-1
hFE-2
VEB= -5V; IC=0
-2.0
150
IC= -5A; VCE= -4V
IC= -10A; VCE= -4V
20
5
DC Current Gain
fT
Current Gain-Bandwidth Product
IC= -0.5A; VCE= -4V
3
MHz
2
isc Website：www.iscsemi.cn
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