3DD15D [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 3DD15D |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD15D
DESCRIPTION
·
·With TO-3 package
·High breakdown voltage
·Low collector saturation voltage
APPLICATIONS
·For B/W TV horizontal output and
power amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolut maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
300
UNIT
V
Open emitter
Open base
200
V
Open collector
5
V
5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=75℃
50
W
℃
℃
Tj
-55~175
-55~175
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal resistance junction to case
2.0
℃/W
Rth j-c
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD15D
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
ICEO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
200
300
5
TYP.
MAX
UNIT
V
IC=10mA ; IB=0
IC=1mA ; IE=0
IE=1mA ; IC=0
IC=2.5A ;IB=0.25A
VCE=50V; IB=0
VCB=150V; IE=0
VEB=5V; IC=0
V
V
1.5
1.0
0.5
0.5
250
V
mA
mA
mA
ICBO
Collector cut-off current
IEBO
Emitter cut-off current
hFE
DC current gain
IC=2A ; VCE=10V
30
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
3DD15D
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance: ±0.10mm)
3
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