3DD167B [ISC]
isc Silicon NPN Power Transistor;
| 型号： | 3DD167B |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
3DD167A
DESCRIPTION
·With TO-3 packaging
·Large collector current
·Low collector saturation voltage
·High power dissipation
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in DC-DC converter
·Driver of solenoid or motor
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
VALUE
80
UNIT
V
Collector-Emitter Voltage
Emitter-Base Voltage
50
V
5
V
Collector Current-Continuous
Total Power Dissipation@TC=75℃
Max.Junction Temperature
Storage Temperature
15
A
PD
150
175
-55~175
W
℃
℃
TJ
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
0.66
℃/W
Rth j-c
1
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
3DD167A
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(sat)
VBE(sat)
ICEO
PARAMETER
CONDITIONS
MIN
80
50
5
MAX
UNIT
V
Collector-Base Sustaining Voltage
IC= 5mA; IE= 0
Collector-Emitter Sustaining Voltage IC= 5mA; IB= 0
V
Emitter-Base Sustaining Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cutoff Current
IE= 10mA; IC= 0
V
IC= 7.5A; IB= 0.75A
IC= 7.5A; IB= 0.75A
VCE= 30V; IE= 0
1.5
1.8
2
V
V
mA
hFE
DC Current Gain
IC= 7.5A; VCE= 5V
15
120
2
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
相关型号：
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