33N10_19 [ISC]
isc N-Channel MOSFET Transistor;
| 型号： | 33N10_19 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc N-Channel MOSFET Transistor |
| 文件： | 总2页 (文件大小：245K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
isc N-Channel MOSFET Transistor
33N10
FEATURES
· Static drain-source on-resistance:
RDS(on) ≤60mΩ
· Enhancement mode
· Fast Switching Speed
· 100% avalanche tested
· Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRITION
· Switching power supplies,converters,AC and DC motor controls
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VDSS
VGS
ID
PARAMETER
VALUE
100
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
±30
V
Drain Current-Continuous
Drain Current-Single Pulsed
Total Dissipation @TC=25℃
Max. Operating Junction Temperature
Storage Temperature
33
A
IDM
132
A
PD
150
W
℃
℃
150
Tj
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
℃/W
℃/W
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
1.0
62.5
1
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
33N10
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
BVDSS
VGS(th)
RDS(on)
IGSS
PARAMETER
CONDITIONS
MIN
100
2
TYP
MAX
UNIT
VGS=0V; ID =250μA
Drain-Source Breakdown Voltage
Gate Threshold Voltage
V
V
VDS=VGS; ID =250μA
VGS=10V; ID=17A
VGS= ±20V;VDS=0V
VDS=100V; VGS= 0V
Is=33A; VGS = 0V
4
Drain-Source On-Resistance
Gate-Source Leakage Current
Drain-Source Leakage Current
60
mΩ
nA
μA
V
±100
250
IDSS
VSD
Diode forward voltage
Input Capacitance
2
Ciss
2000
Crss
Reverse Transfer capacitance
Output Capacitance
100
600
pF
VDS=25V; VGS=0V; fT=1MHz
Coss
2
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
相关型号：
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