33N25L-T47-T [UTC]
33A, 250V N-CHANNEL POWER MOSFET;
| 型号： | 33N25L-T47-T |
| 厂家： | 
Unisonic Technologies |
| 描述： | 33A, 250V N-CHANNEL POWER MOSFET |
| 文件： | 总5页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UNISONIC TECHNOLOGIES CO., LTD
33N25
Preliminary
Power MOSFET
33A, 250V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 33N25 is a N-channel mode power MOSFET using
UTC’s advanced technology to provide customers with a minimum
on-state resistance, low gate charge and high switching speed.
The UTC 33N25 is suitable for high voltage synchronous rectifier
and DC/DC converters, etc.
FEATURES
* RDS(ON)<80mΩ @ VGS=10V,ID=33A
* Low Gate Charge (Typical 18.5nC)
* High Switching Speed
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Pin Assignment
Package
TO-247
Packing
Tube
Halogen Free
33N25G-T47-T
1
2
3
33N25L-T47-T
G
D
S
Note: Pin Assignment: G: Gate D: Drain
S: Source
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Copyright © 2012 Unisonic Technologies Co., Ltd
QW-R502-814.a
33N25
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
VDSS
RATINGS
250
UNIT
V
Drain-Source Voltage
Gate-Source Voltage
VGSS
±20
V
Continuous
(VGS=10V) TC=25°C
Pulsed
ID
33
A
Drain Current
IDM
132
918
A
mJ
Single Pulsed Avalanche Energy (Note 2)
Power Dissipation
EAS
235
W
PD
Derate above 25°C
1.89
mW/°C
°C
Junction Temperature
TJ
+150
-55~+150
Storage Temperature
TSTG
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Starting TJ = 25°C, L = 1.35mH, IAS = 33A, VDD=50V, RG=25ꢀ.
THERMAL DATA
PARAMETER
SYMBOL
θJA
RATINGS
62.5
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
θJC
0.53
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS
MIN TYP MAX UNIT
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
BVDSS ID=250µA, VGS=0V
IDSS VDS=250V, VGS=0V
GS=+20V, VDS=0V
VGS=-20V, VDS=0V
250
V
1
µA
Forward
Reverse
V
+100 nA
-100 nA
Gate- Source Leakage
Current
IGSS
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(TH) VDS=VGS, ID=250µA
GS=10V, ID=33A
VGS=6V, ID=15A
2
4
V
V
32
40
80 mꢀ
72 mꢀ
Static Drain-Source On-State Resistance RDS(ON)
DYNAMIC PARAMETERS
Input Capacitance
CISS
COSS
CRSS
1250
190
45
pF
pF
pF
Output Capacitance
Reverse Transfer Capacitance
SWITCHING PARAMETERS
Total Gate Charge at 10V
Gate to Source Charge
Gate to Drain Charge
Turn-ON Time
V
GS=0V, VDS=25V, f=1.0MHz
QG
QGS
QGD
tON
18.5 28 nC
VGS=10V,VDD=50V,ID=33A,IG=1.0mA
6.5
4.6
35
nC
nC
ns
ns
ns
ns
80
Turn-ON Delay Time
Rise Time
tD(ON)
tR
230
75
VDD=50V, ID=33A, VGS=10V,
GS=16ꢀ
R
Turn-OFF Delay Time
tD(OFF)
120
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Drain-Source Diode Forward Voltage VSD ISD=33A
Notes: 1. Pulse width limited by safe operating area
1.4
V
2. Pulsed: Pulse duration=300µs, Duty cycle ≤2%
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-814.a
www.unisonic.com.tw
33N25
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
VGS
Same Type
as DUT
QG
12V
10V
200nF
QGS
VDS
QGD
50kΩ
300nF
VGS
DUT
3mA
Charge
Gate Charge Test Circuit
Gate Charge Waveforms
Resistive Switching Test Circuit
Resistive Switching Waveforms
1
2
BVDSS
BVDSS-VDD
VDS
2
EAS
=
LIAS
BVDSS
IAS
RG
ID
L
10V
ID(t)
DUT
tP
VDD
VDD
V
DS(t)
Time
tP
Unclamped Inductive Switching Test Circuit
Unclamped Inductive Switching Waveforms
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33N25
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
+
DUT
VDS
RG
L
-
ISD
VGS
VDD
Driver
Same Type
as DUT
dv/dt controlled by RG
ISD controlled by pulse period
Gate Pulse Width
D=
VGS
Gate Pulse Period
(Driver
)
10V
I
FM, Body Diode Forward Current
ISD
di/dt
(DUT)
IRM
Body Diode Reverse Current
VDS
(DUT)
Body Diode Recovery dv/dt
VSD
VDD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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QW-R502-814.a
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33N25
Preliminary
Power MOSFET
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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