2SK1562 [ISC]
Drain Current âID=12A@ TC=25C;
| 型号： | 2SK1562 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Drain Current âID=12A@ TC=25C |
| 文件： | 总2页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc N-Channel MOSFET Transistor
2SK1562
DESCRIPTION
·Drain Current –ID=12A@ TC=25℃
·Drain Source Voltage-
: VDSS=450 (Min)
APPLICATIONS
·Designed for high voltage, high speed power switching
applications such as switching regulators, converters,
solenoid and relay drivers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
UNI
T
SYMBOL
VDSS
VGS
ID
VALUE
450
ARAMETER
Drain-Source Voltage (VGS=0)
Gate-Source Voltage
V
V
±30
12
Drain Current-continuous@ TC=25℃
Total Dissipation@TC=25℃
Max. Operating Junction Temperature
Storage Temperature Range
A
Ptot
150
W
℃
℃
Tj
150
Tstg
-55~150
1
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
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INCHANGE Semiconductor
isc Product Specification
isc N-Channel Mosfet Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
2SK1562
SYMBOL
V(BR)DSS
VGS(
PARAMETER
Drain-Source Breakdown Voltage
Gate Threshold Voltage
CONDITIONS
MIN
450
2.0
MAX
UNIT
V
TYP
VGS=0; ID= 10mA
VDS=0; ID=1mA
4.0
0.65
±100
500
V
3.0
)
th
Drain-Source On-stage Resistance VGS=10V; ID=6A
Ω
RDS(
)
on
IGSS
Gate Source Leakage Current
Zero Gate Voltage Drain Current
VGS= ±30V;VDS= 0
nA
uA
IDSS
VDS=450V; VGS= 0
2
isc website：www.iscsemi.cn
isc & iscsemi is registered trademark
PDF pdfFactory Pro
www.fineprint.cn
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