2SK1566 [HITACHI]

Silicon N-Channel MOS FET; 硅N沟道MOS FET
2SK1566
型号: 2SK1566
厂家: HITACHI SEMICONDUCTOR    HITACHI SEMICONDUCTOR
描述:

Silicon N-Channel MOS FET
硅N沟道MOS FET

晶体 晶体管 功率场效应晶体管 局域网
文件: 总6页 (文件大小:37K)
中文:  中文翻译
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2SK1566, 2SK1567  
Silicon N-Channel MOS FET  
Application  
High speed power switching  
Features  
Low on-resistance  
High speed switching  
Low drive current  
No secondary breakdown  
Suitable for switching regulator and DC-DC converter  
Outline  
TO-220FM  
D
1
2
3
1. Gate  
G
2. Drain  
3. Source  
S
2SK1566, 2SK1567  
Absolute Maximum Ratings (Ta = 25°C)  
Item  
Symbol  
Ratings  
Unit  
Drain to source voltage  
2SK1566  
2SK1567  
VDSS  
450  
V
500  
Gate to source voltage  
Drain current  
VGSS  
±30  
V
ID  
7
A
1
Drain peak current  
ID(pulse)  
*
28  
A
Body to drain diode reverse drain current  
Channel dissipation  
IDR  
7
A
Pch*2  
Tch  
35  
W
°C  
°C  
Channel temperature  
150  
Storage temperature  
Tstg  
–55 to +150  
Note 1. PW 10 µs, duty cycle 1%  
2. Value at TC = 25°C  
2
2SK1566, 2SK1567  
Electrical Characteristics (Ta = 25°C)  
Item  
Symbol Min  
Typ  
Max  
Unit  
Test conditions  
Drain to source  
breakdown voltage  
2SK1566 V(BR)DSS 450  
V
ID = 10 mA, VGS = 0  
2SK1567  
500  
Gate to source breakdown  
voltage  
V(BR)GSS ±30  
V
IG = ±100 µA, VDS = 0  
Gate to source leak current  
IGSS  
±10  
µA  
µA  
VGS = ±25 V, VDS = 0  
VDS = 360 V, VGS = 0  
VDS = 400 V, VGS = 0  
ID = 1 mA, VDS = 10 V  
ID = 4 A, VGS = 10 V *1  
Zero gate voltage  
drain current  
2SK1566 IDSS  
2SK1567  
250  
Gate to source cutoff voltage  
Static Drain to source 2SK1566 RDS(on)  
on state resistance 2SK1567  
VGS(off)  
2.0  
4.0  
3.0  
0.8  
0.9  
V
0.6  
0.7  
6.5  
1050  
280  
40  
Forward transfer admittance  
Input capacitance  
Output capacitance  
Reverse transfer capacitance  
Turn-on delay time  
Rise time  
|yfs|  
Ciss  
Coss  
Crss  
td(on)  
tr  
S
ID = 4 A, VDS = 10 V *1  
VDS = 10 V, VGS = 0,  
f = 1 MHz  
pF  
pF  
pF  
ns  
ns  
ns  
ns  
V
15  
ID = 4 A, VGS = 10 V,  
55  
RL = 7.5 Ω  
Turn-off delay time  
Fall time  
td(off)  
tf  
95  
40  
Body to drain diode forward  
voltage  
VDF  
0.95  
IF = 7 A, VGS = 0  
Body to drain diode reverse  
recovery time  
trr  
320  
ns  
IF = 7 A, VGS = 0,  
diF/dt = 100 A/µs  
Note 1. Pulse test  
See characteristic curves of 2SK1157, 2SK1158.  
3
2SK1566, 2SK1567  
Maximum Safe Operation Area  
50  
20  
Power vs. Temperature Derating  
60  
40  
20  
10  
5
2
1
0.5  
Operation in this Area  
is Limited by RDS (on)  
0.2  
0.1  
2SK1567  
2SK1566  
Ta = 25°C  
0.05  
1
3
10  
30  
100 300 1,000  
0
50  
100  
150  
Drain to Source Voltage VDS (V)  
Case Temperature TC (°C)  
Normalized Transient Thermal Impedance vs. Pulse Width  
3
TC = 25°C  
D=1  
0.5  
1.0  
0.3  
0.1  
0.2  
0.1  
θch–c (t) = γS (t) · θch–c  
θch–c = 3.57°C/W, TC = 25°C  
0.05  
PDM  
0.02  
PW  
D =  
0.03  
0.01  
T
PW  
T
10 µ  
100 µ  
1 m  
10 m  
100 m  
1
10  
Pulse Width PW (s)  
4
Unit: mm  
10.0 ± 0.3  
7.0 ± 0.3  
2.8 ± 0.2  
2.5 ± 0.2  
φ 3.2 ± 0.2  
1.2 ± 0.2  
1.4 ± 0.2  
4.45 ± 0.3  
2.5  
0.7 ± 0.1  
2.54 ± 0.5  
2.54 ± 0.5  
0.5 ± 0.1  
Hitachi Code  
JEDEC  
TO-220FM  
EIAJ  
Conforms  
Weight (reference value) 1.8 g  
Cautions  
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,  
copyright, trademark, or other intellectual property rights for information contained in this document.  
Hitachi bears no responsibility for problems that may arise with third party’s rights, including  
intellectual property rights, in connection with use of the information contained in this document.  
2. Products and product specifications may be subject to change without notice. Confirm that you have  
received the latest product standards or specifications before final design, purchase or use.  
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,  
contact Hitachi’s sales office before using the product in an application that demands especially high  
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk  
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,  
traffic, safety equipment or medical equipment for life support.  
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly  
for maximum rating, operating supply voltage range, heat radiation characteristics, installation  
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used  
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable  
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-  
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other  
consequential damage due to operation of the Hitachi product.  
5. This product is not designed to be radiation resistant.  
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without  
written approval from Hitachi.  
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor  
products.  
Hitachi, Ltd.  
Semiconductor & Integrated Circuits.  
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan  
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109  
URL  
NorthAmerica  
Europe  
: http:semiconductor.hitachi.com/  
: http://www.hitachi-eu.com/hel/ecg  
Asia (Singapore)  
Asia (Taiwan)  
: http://www.has.hitachi.com.sg/grp3/sicd/index.htm  
: http://www.hitachi.com.tw/E/Product/SICD_Frame.htm  
Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm  
Japan  
: http://www.hitachi.co.jp/Sicd/indx.htm  
For further information write to:  
Hitachi Semiconductor  
(America) Inc.  
Hitachi Europe GmbH  
Hitachi Asia (Hong Kong) Ltd.  
Group III (Electronic Components)  
7/F., North Tower, World Finance Centre,  
Harbour City, Canton Road, Tsim Sha Tsui,  
Kowloon, Hong Kong  
Tel: <852> (2) 735 9218  
Fax: <852> (2) 730 0281  
Hitachi Asia Pte. Ltd.  
16 Collyer Quay #20-00  
Hitachi Tower  
Singapore 049318  
Tel: 535-2100  
Electronic components Group  
Dornacher Stra§e 3  
D-85622 Feldkirchen, Munich  
Germany  
Tel: <49> (89) 9 9180-0  
Fax: <49> (89) 9 29 30 00  
179 East Tasman Drive,  
San Jose,CA 95134  
Tel: <1> (408) 433-1990  
Fax: <1>(408) 433-0223  
Fax: 535-1533  
Hitachi Asia Ltd.  
Taipei Branch Office  
3F, Hung Kuo Building. No.167,  
Tun-Hwa North Road, Taipei (105)  
Tel: <886> (2) 2718-3666  
Fax: <886> (2) 2718-8180  
Telex: 40815 HITEC HX  
Hitachi Europe Ltd.  
Electronic Components Group.  
Whitebrook Park  
Lower Cookham Road  
Maidenhead  
Berkshire SL6 8YA, United Kingdom  
Tel: <44> (1628) 585000  
Fax: <44> (1628) 778322  
Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.  

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