2SD388 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD388 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD388
DESCRIPTION
·With TO-3 package
·High power dissipation
APPLICATIONS
·For use in power amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
150
140
7
UNIT
V
Open emitter
Open base
V
Open collector
V
8
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD388
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
140
7
TYP. MAX UNIT
Collector-emitter sustaining voltage IC=0.2A ;IB=0
V
V
Emitter-base breakdown voltage
IE=10mA ;IC=0
Collector-emitter saturation voltage IC=6A; IB=0.6A
2.0
2.5
0.1
0.1
V
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=6A; IB=0.6A
VCB=150V; IE=0
VEB=7V; IC=0
mA
mA
IEBO
hFE-1
IC=1A ; VCE=5V
IC=5A ; VCE=5V
IC=1A ; VCE=10V
50
20
hFE-2
DC current gain
fT
Transition frequency
9
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD388
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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