2SD389 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD389 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：230K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD389
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 60V(Min)
·Wide Area of Safe Operation
·High Power Dissipation
APPLICATIONS
·Designed for medium power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emtter Voltage
Emitter-Base Voltage
VALUE
60
UNT
V
60
V
8
V
Collector Current-Continuous
3.0
A
Collector Power Dissipation
@ TC=25℃
PC
25
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD389
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 0.2A; L= 25mH
60
V
IC= 2A; IB= 0.4A
IC= 1A; VCE= 3V
VCB= 20V; IE= 0
VEB= 8V; IC= 0
1.0
1.4
30
V
V
VCE
(sat)
VBE(
)
on
ICBO
μA
mA
IEBO
hFE-1
hFE-2
1.0
DC Current Gain
IC= 0.1A; VCE= 3V
IC= 1A; VCE= 3
40
30
DC Current Gain
160
hFE-2 Classifications
Q
P
O
30-60
50-100
80-160
2
isc Website：www.iscsemi.cn
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