2SD315F [ISC]
Transistor;
| 型号： | 2SD315F |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：156K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD315
DESCRIPTION
·With TO-66 package
·Complement to type 2SB509
APPLICATIONS
·For use in audio frequency power
amplifier application
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-66) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
UNIT
V
Open emitter
Open base
60
60
V
Open collector
5
4
V
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
10
A
PC
TC=25℃
35
W
℃
℃
Tj
150
-40~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD315
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=10mA ;IB=0
60
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=2A; IB=0.2A
IC=1A ; VCE=2V
VCB=20V; IE=0
VEB=4V; IC=0
1.0
1.5
0.1
1.0
320
V
V
ICBO
mA
mA
IEBO
hFE-1
IC=1A ; VCE=2V
IC=0.1A ; VCE=2V
IC=0.5A ; VCE=5V
40
40
hFE-2
DC current gain
fT
Transition frequency
8
MHz
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200 160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD315
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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