2SD325 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD325 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD325
DESCRIPTION
·
·With TO-220C package
·Complement to type 2SB511
·Low collector saturation voltage
APPLICATIONS
·Designed for use in low frequency
power amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
35
UNIT
Open emitter
Open base
V
V
V
A
A
35
Open collector
5
1.5
ICM
Collector current -peak
3.0
Ta=25℃
TC=25℃
1.75
10
PC
Collector dissipation
W
Tj
Junction temperature
Storage temperature
150
-50~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD325
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=10mA; IB=0
35
IC=1.5A; IB=0.15A
IC=1A ; VCE=5V
VCB=20V; IE=0
VEB=4V; IC=0
1.0
1.5
0.1
1.0
320
V
V
ICBO
mA
mA
IEBO
hFE-1
DC current gain
IC=1A ; VCE=2V
IC=0.1A ; VCE=2V
IC=0.5A ; VCE=5V
40
35
hFE-2
DC current gain
fT
Transition frequency
8
MHz
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200 160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD325
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10mm)
3
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