2SD1985AQ [ISC]
Transistor;
| 型号： | 2SD1985AQ |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总4页 (文件大小：103K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1985 2SD1985A
DESCRIPTION
·With TO-220Fa package
·High forward current transfer ratio hFE
which has satisfactory linearity
·Low collector saturation voltage
·Complement to type 2SB1393 /1393A
APPLICATIONS
·For power amplification
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-220Fa) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
2SD1985
2SD1985A
2SD1985
2SD1985A
60
VCBO
Collector-base voltage
Open emitter
V
80
60
VCEO
Collector-emitter voltage
Open base
V
80
VEBO
IC
Emitter-base voltage
Collector current (DC)
Collector current-peak
Open collector
6
V
A
A
3
ICM
5
25
TC=25℃
Ta=25℃
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1985 2SD1985A
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2SD1985
Collector-emitter
breakdown voltage
VCEO
IC=30mA , IB=0
V
2SD1985A
80
VCEsat
VBE
Collector-emitter saturation voltage
Base-emitter voltage
IC=3A;IB=0.375A
VCE=4V;IC=3A
VCE=60V;IB=0
VCE=80V;IB=0
VCE=30V;IB=0
1.2
1.8
V
V
2SD1985
Collector
ICES
200
300
μA
cut-off current
2SD1985A
2SD1985
Collector
ICEO
μA
cut-off current
2SD1985A
V
CE=60V;IB=0
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
VEB=6V; IC=0
1
mA
IC=1A ; VCE=4V
70
10
250
DC current gain
IC=3A ; VCE=4V
Transition frequency
IC=0.5A; VCE=5V;f=10MHz
30
MHz
Switching times
Turn-on time
0.5
2.5
0.4
μs
μs
μs
ton
ts
IC=1A ;IB1=0.1A
IB2=-0.1A;VCC=50V
Storage time
Fall time
tf
hFE-1 Classifications
Q
P
70-150
120-250
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1985 2SD1985A
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1985 2SD1985A
4
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