2SD1985PQ [PANASONIC]
Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3;
| 型号： | 2SD1985PQ |
| 厂家： | 
PANASONIC |
| 描述： | Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-220, FULL PACK-3 |
| 文件： | 总2页 (文件大小：49K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1985, 2SD1985A
Silicon NPN triple diffusion planar type
For power amplification
Complementary to 2SB1393 and 2SB1393A
Unit: mm
Features
■
●
High forward current transfer ratio hFE which has satisfactory linearity
Low collector to emitter saturation voltage VCE(sat)
10.0±0.2
5.5±0.2
4.2±0.2
2.7±0.2
●
●
Full-pack package which can be installed to the heat sink with
one screw
φ3.1±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
Parameter
Symbol
Ratings
Unit
Collector to
2SD1985
2SD1985A
2SD1985
60
1.3±0.2
VCBO
V
1.4±0.1
base voltage
Collector to
80
+0.2
–0.1
0.5
60
0.8±0.1
VCEO
V
emitter voltage 2SD1985A
Emitter to base voltage
Peak collector current
Collector current
80
VEBO
ICP
6
V
A
A
2.54±0.25
5
5.08±0.5
1
2
3
IC
3
1:Base
2:Collector
3:Emitter
Collector power TC=25°C
25
PC
W
dissipation
Ta=25°C
2
TO–220 Full Pack Package(a)
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +150
Electrical Characteristics (T =25˚C)
■
C
Parameter
Collector cutoff
Symbol
ICES
Conditions
min
typ
max
200
200
300
300
1
Unit
2SD1985
2SD1985A
2SD1985
2SD1985A
VCE = 60V, IB = 0
µA
current
VCE = 80V, IB = 0
VCE = 30V, IB = 0
VCE = 60V, IB = 0
VEB = 6V, IC = 0
Collector cutoff
current
ICEO
IEBO
VCEO
µA
mA
V
Emitter cutoff current
Collector to emitter 2SD1985
voltage 2SD1985A
60
80
70
10
IC = 30mA, IB = 0
*
hFE1
VCE = 4V, IC = 1A
250
Forward current transfer ratio
Base to emitter voltage
hFE2
VBE
VCE = 4V, IC = 3A
VCE = 4V, IC = 3A
1.8
1.2
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 3A, IB = 0.375A
VCE = 5V, IC = 0.5A, f = 10MHz
Transition frequency
Turn-on time
Storage time
Fall time
fT
ton
tstg
tf
30
0.5
2.5
0.4
MHz
µs
IC = 1A, IB1 = 0.1A, IB2 = – 0.1A,
VCC = 50V
µs
µs
*hFE1 Rank classification
Rank
hFE1
Q
P
70 to 150
120 to 250
Note: Ordering can be made by the common rank (PQ rank hFE = 70 to 250) in the rank classification.
1
Power Transistors
2SD1985, 2SD1985A
PC — Ta
IC — VCE
IC — VBE
40
5
4
3
2
1
0
8
TC=25˚C
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
VCE=4V
7
6
25˚C
–25˚C
IB=100mA
30
20
10
0
90mA
80mA
70mA
60mA
50mA
TC=100˚C
5
4
3
2
1
0
(1)
(2)
40mA
30mA
20mA
10mA
(3)
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
2.4
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
10000
10000
IC/IB=8
VCE=4V
VCE=5V
f=10MHz
TC=25˚C
30
10
3000
3000
1000
1000
TC=100˚C
–25˚C
3
1
300
100
300
100
25˚C
TC=100˚C
25˚C
–25˚C
0.3
0.1
30
10
30
10
0.03
0.01
3
1
3
1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
–10
10000
1000
100
10
ICP
IC
Non repetitive pulse
TC=25˚C
Note: Rth was measured at Ta=25˚C and under natural convection.
(1) PT=10V × 0.2A (2W) and without heat sink
–3
–1
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
t=1ms
DC
10ms
– 0.3
– 0.1
(1)
(2)
– 0.03
– 0.01
1
– 0.003
– 0.001
0.1
–1
–3
–10 –30 –100 –300 –1000
10–4
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
相关型号：
2SD1986C7
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1986C7K
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1986K
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
ROHM
2SD1987C7
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SD1987C7K
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
2SD1987K
Power Bipolar Transistor, 4A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220FP, 3 PIN
ROHM
©2020 ICPDF网 联系我们和版权申明