2SD1769 [ISC]
isc Silicon NPN Darlington Power Transistor; ISC的硅NPN达林顿功率晶体管
| 型号： | 2SD1769 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：99K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1769
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= 3A
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = 1.5V(Max)@ IC= 3A
APPLICATIONS
·Designed for solenoid driver, relay and motor, series
regulator, and general purpose applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current-Continuous
Collector Current-Peak
Base Current
VALUE
UNIT
V
120
120
V
6
V
6
10
A
ICM
A
IB
1
A
Collector Power Dissipation
TC=25℃
PC
50
W
℃
℃
Tj
Junction Temperature
150
-55~150
Tstg
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1769
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC= 10mA, IB= 0
120
IC= 3A ,IB= 3mA
IC= 3A ,IB= 3mA
VCB= 120V, IE= 0
VEB= 6V; IC= 0
1.5
2.0
10
V
)
sat
V
VBE(
)
sat
ICBO
μA
mA
IEBO
hFE
fT
Emitter Cutoff Current
20
DC Current Gain
IC= 3A ; VCE= 2V
IE= -0.2A ; VCE= 12V
2000
Current-Gain—Bandwidth Product
100
MHz
Switching Times
Turn-on Time
0.5
5.5
1.5
μs
μs
μs
ton
tstg
tf
IC= 3A ,RL= 10Ω,
IB1= -IB2= 3mA,VCC= 30V
Storage Time
Fall Time
isc Website：www.iscsemi.cn
相关型号：
2SD1771AH
Power Bipolar Transistor, 1A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
PANASONIC
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