2SD1770 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD1770 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：233K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1770
DESCRIPTION
·High Power Dissipation
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·Complement to Type 2SB1190
APPLICATIONS
·Power amplifier applications.
·TV vertical deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
200
V
V
V
A
A
150
6
1
Collector Current-Continuous
Collector Current-Peak
ICM
2
Total Power Dissipation
@ TC=25℃
25
PC
W
Total Power Dissipation
@ Ta=25℃
1.4
TJ
Junction Temperature
150
-55~150
℃
℃
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1770
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
150
6
TYP.
MAX
UNIT
V
IC= 5mA; IB= 0
IE= 0.5mA; IC= 0
V
IC= 0.5A; IB= 50mA
IC= 0.3A; VCE= 10V
VCB= 200V; IE= 0
1.0
1.0
50
V
VCE
(sat)
(on)
V
VBE
ICBO
μA
μA
IEBO
hFE-1
hFE-2
fT
Emitter Cutoff Current
VEB= 4V; IC= 0
50
DC Current Gain
IC= 0.1A; VCE= 10V
IC= 0.3A; VE= 10V
IC= 0.1A; VCE= 10V
IE= 0; VCB= 10V; ftest=1MHz
60
50
240
DC Current Gain
Current-Gain—Bandwidth Prouct
Output Capacitance
20
27
MHz
pF
COB
hFE-1 Classifications
Q
P
60-140
100-240
2
isc Website：www.iscsemi.cn
相关型号：
2SD1771AH
Power Bipolar Transistor, 1A I(C), 180V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
PANASONIC
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