2SD1427 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1427 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：95K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1427
DESCRIPTION
·With TO-3P(H)1S package
·Built-in damper diode
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in large screen color
deflection circuits
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1500
600
5
UNIT
V
Open base
V
Open collector
V
5
A
IB
Base current
2.5
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
-55~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction case
1.56
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1427
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)EBO
VCE(sat)
VBE(sat)
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Emitter-base breakdown voltage
IE=200mA; IC=0
5
Collector-emitter saturation voltage IC=4A; IB=0.8A
5.0
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
DC current gain
IC=4A; IB=0.8A
V
VCB=500V; IE=0
IC=1A ; VCE=5V
IC=0.1A ; VCE=10V;f=1MHz
IE=0 ; VCB=10V;f=1MHz
IF=5A
μA
hFE
8
fT
Transition freuqency
Output capacitance
Diode forward voltage
Fall time
3
MHz
pF
COB
165
VF
2.0
1.0
V
tf
IC=4A;IB1=0.8A
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1427
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.15 mm)
3
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