2SD1430 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1430 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：92K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1430
DESCRIPTION
·With TO-3P(H)IS package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·Designed for use in color TV horizontal
output applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
600
UNIT
V
Open emitter
Open base
V
Open collector
5
V
3.5
A
IE
Emitter current
-3.5
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1430
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCE(sat)
VBE(sat)
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
8.0
1.5
10
UNIT
V
Collector-emitter saturation voltage IC=3A; IB=0.8A
4.0
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=3A; IB=0.8A
V
VCB=500V; IE=0
VEB=5V; IC=0
μA
mA
IEBO
1
hFE
IC=0.5A ; VCE=5V
IC=0.1A ; VCE=10V
IE=0 ; VCB=10V;f=1.0MHz
IC=3A;IB1=0.8A
8
20
3
fT
Transition freuqency
Output capacitance
Fall time
MHz
pF
COB
95
tf
1.0
μs
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1430
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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