2SC3980 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC3980 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：221K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3980
DESCRIPTION
·
·Collector-Base Breakdown Voltage-
: V(BR)CBO= 900V(Min.)
·Wide Area of Safe Operation
·High Speed Switching
APPLICATIONS
·Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCES
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voage
Emitter-Base Voltage
VALUE
UNIT
V
900
900
V
800
V
7
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
4
A
ICM
6
A
IB
2
3
A
Collector Power Dissipation
@Ta=25℃
PC
W
Collector Power Dissipation
@TC=25℃
70
Tj
Junction Temperature
150
℃
℃
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3980
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCE(
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
IC= 10mA; IB= 0
800
V
IC= 2A; IB= 0.4A
1.5
1.5
50
V
)
sat
IC= 2A; IB= 0.4A
V
VBE(
)
sat
ICBO
VCB= 900V; IE= 0
VEB= 7V; IC= 0
μA
μA
IEBO
hFE-1
hFE-2
fT
Emitter Cutoff Current
50
DC Current Gain
IC= 0.1A; VCE= 5V
IC= 2A; VCE= 5V
8
6
DC Current Gain
Current-Gain—Bandwidth Product
IC= 0.2A; VCE= 5V; f= 1MHz
15
MHz
Switching Times
Turn-on Time
0.7
2.5
0.3
μs
μs
μs
ton
IC= 2A; IB1= 0.4A; IB2= -0.8A;
VCC= 250V
Storage Time
Fall Time
ts
tf
isc Website：www.iscsemi.cn
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