2SC3482 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC3482 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：223K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3482
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·High Reliability
·Built-in Damper Diode
APPLICATIONS
·Designed for high definition CRT display horizontal
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltge
Emitter-Base Voltage
VALUE
1500
800
UNIT
V
V
7
V
Collector Current- Continuous
Collector Current-Pulse
6
A
ICP
16
A
Collector Power Dissipation
@ TC=25℃
PC
120
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC3482
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
800
1500
7
TYP. MAX UNIT
IC= 5mA; RBE= ∞
V
V
V
IC= 5mA; IE= 0
IE= 200mA; IC= 0
IC= 5A; IB= 1.2A
IC= 5A; IB= 1.2A
VCB= 800V; IE= 0
VEB= 4V; IC= 0
C= 1A; VCE= 5V
IF= 6A
5.0
1.5
10
V
V
VCE
(sat)
VBE
(sat)
ICBO
μA
mA
IEBO
hFE
VECF
fT
Emitter Cutoff Current
40
8
130
DC Current Gain
C-E Diode Forward Vltage
Current-Gain—Bandwidth Product
Storage Time
2.0
V
IC= 1A; VCE= 10V
3
MHz
μs
μs
3.0
0.3
tstg
IC= 5A, IB1= 1A; IB2= -2A;
RL= 40Ω; VCC= 200V
Fall Time
tf
2
isc Website：www.iscsemi.cn
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