2SC3486 [JMNIC]
Silicon NPN Power Transistors;
| 型号： | 2SC3486 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3486
DESCRIPTION
·With TO-3PN package
·High voltage ,high speed
·Wide area of safe operation
APPLICATIONS
·For color TV display horizontal
output applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
800
UNIT
V
Open emitter
Open base
V
Open collector
7
V
6
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
16
A
PC
TC=25℃
120
W
℃
℃
Tj
150
Tstg
-55~150
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3486
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
800
1500
7
TYP.
MAX
UNIT
V
IC=5mA ;RBE=∞
IC=5mA ;IE=0
V
IE=5mA ;IC=0
V
IC=5A; IB=1.2A
IC=5A; IB=1.2A
VCB=800V; IE=0
VEB=5V; IC=0
5.0
1.5
10
1
V
V
μA
mA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=1A ; VCE=5V
IC=1A ; VCE=10V
8
fT
Transition frequency
3
MHz
Switching times
tstg
Storage time
3.0
0.3
μs
μs
IC=5A;RL=40Ω
IB1=1A; IB2=-2A
tf
Fall time
2
JMnic
Product Specification
Silicon NPN Power Transistors
2SC3486
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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