2SC3181O [ISC]
Transistor;
| 型号： | 2SC3181O |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总4页 (文件大小：161K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3181N
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1264N
APPLICATIONS
·Power amplifier applications
·Recommend for 55W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
120
120
5
UNIT
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
Open collector
V
8
A
IB
Base current
0.8
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
80
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3181N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=50mA ,IB=0
120
IC=6A; IB=0.6A
IC=4A ; VCE=5V
VCB=120V; IE=0
VEB=5V; IC=0
2.0
1.5
5
V
V
ICBO
Collector cut-off current
Emitter cut-off current
DC current gain
μA
μA
IEBO
5
hFE-1
hFE-2
fT
IC=1A ; VCE=5V
IC=4A ; VCE=5V
IC=1A ; VCE=5V
IE=0 ; VCB=10V ;f=1MHz
55
35
160
DC current gain
Transition frequency
30
MHz
pF
Cob
Output capacitance
190
hFE-1 Classifications
R
O
55-110
80-160
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3181N
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3181N
4
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