2SC3182NO [ISC]
暂无描述;
| 型号： | 2SC3182NO |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | 暂无描述 晶体 晶体管 |
| 文件： | 总4页 (文件大小：88K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3182N
DESCRIPTION
·With TO-3P(I) package
·Complement to type 2SA1265N
APPLICATIONS
·Power amplifier applications
·Recommend for 70W high fidelity audio
frequency amplifier output stage
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3P(I)) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
140
140
5
UNIT
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
V
Open collector
V
10
A
IB
Base current
1
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
100
150
-55~150
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3182N
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBE
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter voltage
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=50mA ,IB=0
140
IC=7A; IB=0.7A
IC=5A ; VCE=5V
VCB=140V; IE=0
VEB=5V; IC=0
2.0
1.5
5
V
V
ICBO
Collector cut-off current
Emitter cut-off current
DC current gain
μA
μA
IEBO
5
hFE-1
hFE-2
fT
IC=1A ; VCE=5V
IC=5A ; VCE=5V
IC=1A ; VCE=5V
IE=0 ; VCB=10V ;f=1MHz
55
35
160
DC current gain
Transition frequency
30
MHz
pF
Cob
Output capacitance
220
hFE-1 Classifications
R
O
55-110
80-160
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3182N
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3182N
4
相关型号：
©2020 ICPDF网 联系我们和版权申明