2SC2761 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC2761 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：128K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2761
DESCRIPTION
·With TO-3 package
·High voltage ,high speed
APPLICATIONS
·Converters
·Inverters
·Switching regulators
·Motor controls
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
MAX
450
400
7
UNIT
V
Open emitter
Open base
V
Open collector
V
30
A
IB
Base current
6
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
200
200
-65~200
W
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2761
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)CBO
V(BR)EBO
PARAMETER
CONDITIONS
MIN
400
450
7
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A ; IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
IC=1m A ; IE=0
IE=1m A ; IC=0
V
V
Collector-emitter saturation voltage IC=20A; IB=4A
1.5
1.7
V
VCE
VBE
(sat)
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=20A; IB=4A
VCB=450V IE=0
VEB=7V; IC=0
V
(sat)
ICBO
100
100
μA
μA
IEBO
hFE
IC=15A ; VCE=2V
8
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2761
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
2SC2767
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN
FUJI
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