2SC2767 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC2767 |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:165K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2767
DESCRIPTION
·With TO-220C package
·High speed switching
·High reliability
APPLICATIONS
·Switching regulators
·Ultrasonic generators
·High frequency inverters
·General purpose power amplifiers
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
3
Emitter
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
250
200
7
UNIT
Open emitter
Open base
V
V
V
A
A
W
ꢀ
Open collector
5
IB
Base current
1.5
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
40
Tj
150
-55~150
Tstg
ꢀ
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-C
Thermal resistance junction case
3.0
ꢀ/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2767
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)CBO
V(BR)EBO
VCEsat
VBEsat
PARAMETER
CONDITIONS
MIN
200
250
7
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=25mA ; IB=0
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
IC=100µA ; IE=0
IE=100µA ; IC=0
IC=2A; IB=0.8A
IC=2A; IB=0.8A
VCB=250V ;IE=0
VEB=7V; IC=0
V
V
0.2
1.0
10
V
V
ICBO
µA
µA
IEBO
Emitter cut-off current
100
80
hFE
DC current gain
IC=1A ; VCE=5V
20
Switching times
ton
tstg
tf
Turn-on time
1.0
2.0
1.0
µs
µs
µs
IC=4A; IB1=-IB2=-0.4A
RL=20Ω
Storage time
Fall time
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2767
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC2767
4
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