2SC2489R [ISC]
Transistor;
| 型号： | 2SC2489R |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2489
DESCRIPTION
·Good Linearity of hFE
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 150V (Min)
·Wide Area of Safe Operation
·Complement to Type 2SA1065
APPLICATIONS
·Designed for AF amplifier,high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
MAX
150
150
5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
10
A
ICM
15
A
Collector Power Dissipation
@TC=25℃
PC
120
150
-65~150
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC2489
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP. MAX UNIT
VCEO(SUS)
Collector-Emitter Sustaining Voltage IC= 0.1A ; IE= 0
150
V
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
IC= 8A; IB= 0.8A
IC= 10A ; VCE= 5V
VCB= 70V; IE= 0
VEB= 5V; IC= 0
2.0
2.5
1
V
V
VCE
(sat)
(on)
VBE
ICBO
mA
mA
IEBO
hFE-1
hFE-2
fT
2
DC Current Gain
IC= 2A ; VCE= 5V
IC= 10A ; VCE= 5V
C= 0.5A ; VCE= 10V
40
30
280
DC Current Gain
Current-Gain—Bandwidth Product
50
MHz
hFE-1 Classifications
R
Q
P
O
40-80
60-120
90-180
140-280
isc Website：www.iscsemi.cn
相关型号：
2SC2497AR
Power Bipolar Transistor, 1.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, TO-126B-A1, 3 PIN
PANASONIC
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