2SC2497A [PANASONIC]
Silicon NPN epitaxial planar type(For low-frequency power amplification); NPN硅外延平面型（对于低频功率放大）
| 型号： | 2SC2497A |
| 厂家： | 
PANASONIC |
| 描述： | Silicon NPN epitaxial planar type(For low-frequency power amplification) |
| 文件： | 总4页 (文件大小：72K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SC2497, 2SC2497A
Silicon NPN epitaxial planar type
Unit: mm
+0.5
For low-frequency power amplification
8.0
–0.1
3.2 0.2
Complementary to 2SA1096 and 2SA1096A
φ 3.16 0.1
I Features
•
•
High collector to emitter voltage VCEO
TO-126B package which requires no insulation plate for installa-
tion to the heat sink
I Absolute Maximum Ratings TC = 25°C
Parameter
Symbol
VCBO
Rating
Unit
V
0.75 0.1
4.6 0.2
0.5 0.1
2.3 0.2
0.5 0.1
1.76 0.1
Collector to base voltage
70
50
60
5
2SC2497
2SC2497A
VCEO
V
Collector to
1 : Emitter
2 : Collector
3 : Base
emitter voltage
1
2
3
Emitter to base voltage
Peak collector current
Collector current
VEBO
ICP
IC
V
A
TO-126B-A1 Package
3
1.5
A
1
Collector power dissipation
PC
1.2 *
W
2
5 *
Junction temperature
Storage temperature
Tj
150
°C
°C
Tstg
−55 to +150
Note) 1: Without heat sink
*
2: With a 100 × 100 × 2 mm A1 heat sink
*
I Electrical Characteristics TC = 25°C
Parameter
Symbol
ICBO
Conditions
Min
Typ
Max
1
Unit
µA
µA
µA
V
Collector cutoff current
VCB = 20 V, IE = 0
VCE = 10 V, IB = 0
VEB = 5 V, IC = 0
IC = 1 mA, IE = 0
IC = 2 mA, IB = 0
ICEO
100
10
Emitter cutoff current
IEBO
Collector to base voltage
VCBO
VCEO
70
50
60
80
2SC2497
2SC2497A
V
Collector to emitter
voltage
Forward current transfer ratio *
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
hFE
VCE(sat)
VBE(sat)
fT
VCE = 5 V, IC = 1 A
220
1
IC = 1.5 A, IB = 0.15 A
IC = 1.5 A, IB = 0.15 A
V
V
1.5
VCB = 5 V, IE = − 0.5 A, f = 200 MHz
150
35
MHz
pF
Collector output capacitance
Cob
VCB = 20 V, IE = 0, f = 1 MHz
Note) : Rank classification
*
Rank
R
S
hFE
80 to 160
120 to 220
188
Power Transistors
2SC2497, 2SC2497A
PC Ta
IC VCE
VCE(sat) IC
6
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
(1)With a 100×100×2mm
IC/IB=10
TC=25˚C
Al heat sink
10
(2)Without heat sink
5
4
3
2
1
0
IB=50mA
3
1
45mA
40mA
(1)
35mA
30mA
25mA
20mA
0.3
0.1
TC=100˚C
25˚C
–25˚C
15mA
10mA
5mA
(2)
0.03
0.01
0
40
80
120
160
0
2
4
6
8
10
12
0.01
0.03
0.1
0.3
1
3
(
)
( )
V
( )
Collector current IC A
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VBE(sat) IC
hFE IC
fT IE
240
200
160
120
80
VCB=5V
f=200MHz
TC=25˚C
IC/IB=10
VCE=5V
10
1000
3
1
300
100
TC=100˚C
TC=–25˚C
–25˚C
25˚C
100˚C
25˚C
0.3
0.1
30
10
40
0.03
0.01
3
1
0
0.01
0.03
0.1
0.3
1
3
0.01
0.03
0.1
0.3
1
3
–0.01 –0.03 –0.1 –0.3
–1
–3
–10
( )
A
( )
A
( )
A
Collector current IC
Collector current IC
Emitter current IE
Cob VCB
VCER RBE
ICBO Ta
240
100
90
80
70
60
50
40
30
20
10
0
104
103
102
10
IC=10mA
TC=25˚C
VCB=40V
IE=0
f=1MHz
TC=25˚C
200
160
120
80
40
0
1
1
3
10
30
100
0.1 0.3
1
3
10
30
100
0
20 40 60 80 100 120 140 160 180
( )
V
(
)
(
Ambient temperature Ta ˚C
)
Collector to base voltage VCB
Base to emitter resistance RBE kΩ
189
2SC2497, 2SC2497A
Power Transistors
Area of safe operation (ASO)
10
Single pulse
TC=25˚C
ICP
3
t=10ms
IC
1
t=1s
0.3
0.1
0.03
0.01
0.003
0.001
0.1 0.3
1
3
10
30
100
( )
V
Collector to emitter voltage VCE
190
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2001 MAR
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