2SA1292 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1292 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：181K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1292
DESCRIPTION
·With TO-3PN package
·Low saturation voltage.
·Fast switching time.
·Complement to type 2SC3256
APPLICATIONS
·Various inductance, lamp drivers for
electrical equipment.
·Inverters, converters
·Power amplifier
·High-speed switching
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
-80
UNIT
V
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
-60
V
Open collector
-5
V
-15
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
-20
A
PC
TC=25℃
80
W
℃
℃
Tj
150
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1292
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CBO
V(BR)CEO
V(BR)EBO
VCEsat
ICBO
PARAMETER
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
CONDITIONS
MIN
-80
-60
-5
TYP.
MAX
UNIT
V
IC=-1mA ,IE=0
IC=-1mA ,IB=0
V
IE=-1mA ,IC=0
V
IC=-7.5A; IB=-0.375A
VCB=-40V; IE=0
VEB=-4V; IC=0
-0.4
-100
-100
280
V
μA
μA
IEBO
Emitter cut-off current
hFE
DC current gain
IC=-1A ; VCE=-2V
IC=-1A ; VCE=-5V
70
fT
Transition frequency
100
MHz
Switching times
ton
Turn-on time
0.1
0.5
0.1
μs
μs
μs
IC=-6A IB1=- IB2=-0.3A
VCC=-20V;RL=3.3Ω
ts
Storage time
Fall time
tf
hFE Classifications
Q
R
S
70-140
100-200
140-280
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1292
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
©2020 ICPDF网 联系我们和版权申明