2SA1293 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2SA1293 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总4页 (文件大小：153K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1293
DESCRIPTION
·With TO-220 package
·Complement to type 2SC3258
·Low collector saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-220) and symbol
3
Base
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-100
-80
UNIT
V
Open emitter
Open base
V
Open collector
-7
V
-5
A
ICM
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
-8
A
PC
TC=25℃
30
W
℃
℃
Tj
150
-55~150
Tstg
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1293
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=-10mA ,IB=0
MIN
TYP.
MAX UNIT
-80
V
IC=-3A; IB=-0.15A
IC=-3A; IB=-0.15A
VCB=-100V; IE=0
VEB=-7V; IC=0
-0.2
-0.9
-0.4
-1.2
-1
V
V
μA
μA
IEBO
-1
hFE-1
DC current gain
IC=-1A ; VCE=-1V
IC=-3A ; VCE=-1V
IE=0 ; VCB=-10V;f=1MHz
IC=-1A ; VCE=-4V
70
30
240
hFE-2
DC current gain
Cob
Output capacitance
200
60
pF
fT
Transition frequency
MHz
Switching times
ton Turn-on time
ts
0.2
1.0
0.1
μs
μs
μs
IB1=- IB2=-0.15A
RL=10Ω;VCC≈30V
Storage time
Fall time
tf
hFE-1 Classifications
O
Y
70-140
120-240
2
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1293
PACKAGE OUTLINE
Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm)
3
JMnic
Product Specification
Silicon PNP Power Transistors
2SA1293
4
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