2SA1261M [ISC]
Transistor;
| 型号： | 2SA1261M |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1261
DESCRIPTION
·With TO-220 package
·High switching speed
·Low collector saturation voltage
·Complement to type 2SC3157
APPLICATIONS
·For high voltage ,high speed and
power switching applications
PINNING
PIN
DESCRIPTION
1
Emitter
Collector
Base
2
Fig.1 simplified outline (TO-220) and symbol
3
ABSOLUTE MAXIMUM RATINGS (TC=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
-100
-100
-7
UNIT
V
Open emitter
Open base
V
Open collector
V
-10
A
ICM
Collector current-Peak
Base current
-20
A
IB
-3.5
A
Ta=25℃
TC=25℃
1.5
PT
Total power dissipation
W
60
Junction temperature
Storage temperature
150
℃
℃
Tj
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1261
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
VCEO(SUS)
Collector-emitter sustaining voltage IC=-5A ;IB1=-0.5A;L=1mH
Collector-emitter saturation voltage IC=-5A; IB=-0.5A
-100
-0.6
-1.5
V
VCE
VBE
(sat)
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-5A; IB=-0.5A
VCB=-100V; IE=0
V
(sat)
ICBO
-0.01
mA
mA
mA
V
CE=-100V; VBE=-1.5V
Ta=125℃
-0.01
-1.0
ICEX
IEBO
VEB=-5V; IC=0
-0.01
200
hFE-1
hFE-2
hFE-3
IC=-0.5A ; VCE=-5V
IC=-3A ; VCE=-5V
IC=-5A ; VCE=-5V
40
40
20
DC current gain
200
DC current gain
Switching times
Turn-on time
0.5
1.5
0.5
μs
μs
μs
ton
IC=-5A;IB1=-IB2=-0.5A ,
RL=10Ω;VCC=-50V
Storage time
Fall time
ts
tf
hFE-2 classifications
M
L
K
40-80
60-120
100-200
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2SA1261
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3
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