首页 |元器件品牌

2N6546 [ISC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2N6546
型号： 2N6546
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管 局域网
文件： 总4页 (文件大小：148K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6546 2N6547  
DESCRIPTION  
·With TO-3 package  
·High voltage ,high speed  
APPLICATIONS  
Suited for 115 and 220 volt line operated  
switch-mode applications such as :  
·Switching regulators  
·PWM inverters and motor controls  
·Solenoid and relay drivers  
·Deflection circuits  
PINNING (See Fig.2)  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALUE  
650  
850  
300  
400  
9
UNIT  
2N6546  
2N6547  
2N6546  
2N6547  
VCBO  
Collector-base voltage  
Open emitter  
V
VCEO  
Collector-emitter voltage  
Open base  
V
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
V
A
15  
Collector current-peak  
Base current  
30  
A
10  
A
IE  
Emitter current  
25  
A
IEM  
PT  
Tj  
Emitter current-peak  
Total power dissipation  
Junction temperature  
Storage temperature  
50  
A
Tc=25℃  
175  
200  
-65~200  
W
℃
℃
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6546 2N6547  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
300  
400  
TYP.  
MAX  
UNIT  
2N6546  
2N6547  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=100mA ; IB=0  
V
VCEsat-1  
VCEsat-2  
VBEsat  
Collector-emitter saturation voltage IC=10A; IB=2A  
Collector-emitter saturation voltage IC=15A; IB=3A  
1.5  
5.0  
1.6  
V
V
Base-emitter saturation voltage  
IC=10A ;IB=2A  
V
V
CE=650V; VBE(off)=1.5V  
1.0  
4.0  
2N6546  
mA  
mA  
mA  
TC=100℃  
ICEV  
Collector cut-off current  
VCE=850V ;VBE(off)=1.5V  
1.0  
4.0  
2N6547  
TC=100℃  
IEBO  
hFE-1  
hFE-2  
fT  
Emitter cut-off current  
DC current gain  
VEB=9V; IC=0  
1.0  
60  
30  
35  
IC=5A ; VCE=2V  
12  
6
DC current gain  
IC=10A ; VCE=2V  
Transition frequency  
IC=0.5A ; VCE=10V;f=1MHz  
6
MHz  
Switching times  
td  
tr  
Delay time  
0.05  
1.0  
4.0  
0.8  
μs  
μs  
μs  
μs  
Rise time  
Storage time  
Fall time  
IC=10A; IB1=-IB2=2.0A  
VCC=250V; tp=0.1ms;  
Duty Cycle≤2.0%  
tstg  
tf  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
1.0  
UNIT  
℃/W  
Rth j-c  
Thermal resistance from junction to case  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6546 2N6547  
PACKAGE OUTLINE  
Fig.2 Outline dimensions  
3
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2N6546 2N6547  
4

相关型号：

2N6546LEADFREE

 Power Bipolar Transistor, 15A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, TO-3, 3 PIN
CENTRAL

2N6547

 MULTIEPITAXIAL MESA NPN
STMICROELECTR

2N6547

 POWER TRANSISTORS(15A,175W)
MOSPEC

2N6547

 SWITCHMODE SERIES NPN SILICON POWER TRANSISTORS
BOCA

2N6547

 NPN POWER SILICON TRANSISTOR
MICROSEMI

2N6547

 SWITCHMODE Series NPN Silicon Power Transistors
ONSEMI

2N6547

 POWER TRANSISTORS TO-3 CASE
CENTRAL

2N6547

 Silicon NPN Power Transistors
ISC

2N6547

 Silicon NPN Power Transistors
SAVANTIC

2N6547

 15 AMPERE NPN SILICON POWER TRANSISTORS
NJSEMI

2N6547

 Bipolar NPN Device in a Hermetically sealed TO3
SEME-LAB

2N6547

 Silicon NPN Power Transistors
JMNIC
©2020 ICPDF网 联系我们和版权申明