2N6547 [MICROSEMI]
NPN POWER SILICON TRANSISTOR; NPN功率硅晶体管
| 型号： | 2N6547 |
| 厂家： | 
Microsemi |
| 描述： | NPN POWER SILICON TRANSISTOR |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/ 525
Devices
Qualified Level
JAN
2N6546
2N6547
JANTX
JANTXV
MAXIMUM RATINGS
2N6546 2N6547
Ratings
Symbol
Units
Vdc
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
300
600
400
850
VCEO
VCEX
VEBO
IB
Vdc
8
Vdc
10
Adc
Collector Current
15
175
100
Adc
W
W
0C
IC
Total Power Dissipation
@ TC = +250C (1)
@ TC = +1000C (1)
PT
Operating & Storage Temperature Range
TO-3 (TO-204AA)*
-65 to +200
Top,
T
stg
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
1) Between TC = +250C and TC = +2000C, linear derating factor (average) = 1.0 W/0C
Symbol
Max.
Unit
0C/W
1.0
R
qJC
*See Appendix A for Package
Outline
ELECTRICAL CHARACTERISTICS
Characteristics
Symbol
Min.
Max.
Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 100 mAdc
Vdc
2N6546
2N6547
V(BR)
300
400
CEO
Collector-Emitter Cutoff Current
VCE = 600 Vdc; VBE = 1.5 Vdc
VCE = 850 Vdc; VBE = 1.5 Vdc
Emitter-Base Cutoff Current
VEB = 8 Vdc
2N6546
2N6547
mAdc
mAdc
ICEX
1.0
1.0
IEBO
1.0
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
2N6546, 2N6547 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics
ON CHARACTERISTICS (3)
Symbol
Min.
Max.
Unit
Forward-Current Transfer Ratio
IC = 1 Adc; VCE = 2 Vdc
IC = 5 Adc; VCE = 2 Vdc
IC = 10 Adc; VCE = 2 Vdc
Base-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 10 Adc
15
12
6
hFE
60
Vdc
Vdc
VBE(sat)
1.6
Collector-Emitter Saturated Voltage
IB = 2.0 Adc; IC = 10 Adc
IB = 3.0 Adc; IC = 15 Adc
VCE(sat)
1.5
5.0
DYNAMIC CHARACTERISTICS
Magnitude of Common-Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
½hfe½
IC = 0.5 Adc, VCE = 10 Vdc, f = 1 MHz
Output Capacitance
VCB = 10 Vdc, IE = 0, 0.1 MHz £ f £ 1.0 MHz
6.0
30
pF
Cobo
500
SWITCHING CHARACTERISTICS
Turn-On Time
VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc
Turn-Off Time
ton
ms
ms
1.0
4.7
toff
VCC = 250 Vdc; IC = 10 Adc; IB1 = IB2 = 2 Adc
SAFE OPERATING AREA
DC Tests
TC = +250C; tp = 1 s; 1 cycle (See Figure 3 of MIL-PRF-19500/525)
Test 1
VCE = 11.7 Vdc; IC = 15 Adc
Test 2
VCE = 20 Vdc; IC = 8.75 Adc
Test 3
VCE = 250 Vdc; IC = 45 mAdc
VCE = 350 Vdc; IC = 30 mAdc
Unclamped Inductive lOAD
2N6546
2N6547
TC = +250C; duty cycle £ 10%; RS = 0.1 W; tr = tf £ 500 hs (See Figure 4 of MIL-PRF-19500/525)
Test 1
Tp = 5 ms; (vary to obtain IC); RBB1 = 15 W; VBB1 = 38.5 Vdc; RBB2 = 50 W;
VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 15 Adc; L = 10 mH
Test 2
Tp = 5 ms; (vary to obtain IC); RBB1 = 15 W; VBB1 = 38.5 Vdc; RBB2 = 50 W;
VBB2 = -4 Vdc; VCC = 20 Vdc; IC = 100 mAdc; L = 1 mH
Clamped Inductive Load
TA = +250C; duty cycle £ 5%; Tp = 1.5 ms; (vary to obtain IC); VCC = 20 Vdc; IC = 8 Adc; L = 180 mH
(See Figure 5 of MIL-PRF-19500/525)
Clamped Voltage = 350 Vdc
Clamped Voltage = 450 Vdc
2N6546
2N6547
3.) Pulse Test: Pulse Width = 300ms, Duty Cycle £ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
相关型号：
2N6547LEADFREE
Power Bipolar Transistor, 15A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, TO-3, 3 PIN
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