2N5956 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2N5956 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5954 2N5955 2N5956
DESCRIPTION
·With TO-66 package
·Low collector saturation voltage
·Excellent safe operating area
·Complement to type 2N6372/6373/6374
APPLICATIONS
·Designed for driver circuits,switching
and amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-66) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALU
-90
UNIT
2N5954
2N5955
2N5956
2N5954
2N5955
2N5956
VCBO
Collector-base voltage
Open emitter
V
-70
-50
-80
VCEO
Collector-emitter voltage
Open base
V
-60
-40
VEBO
IC
Emitter-base voltage
Collector current
Open collector
-5
V
A
-6
IB
Base current
-2
A
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
40
W
℃
℃
150
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
4.3
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5954 2N5955 2N5956
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
-80
-60
-40
TYP.
MAX
UNIT
2N5954
2N5955
2N5956
2N5954
2N5955
2N5956
2N5954
2N5955
2N5956
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=-0.1A ;IB=0
V
IC=-2A; IB=-0.2A
IC=-2.5A; IB=-0.25A
IC=-3A; IB=-0.3A
IC=-2A ; VCE=-4V
IC=-2.5A ; VCE=-4V
IC=-3A ; VCE=-4V
IC=-6A ; VCE=-4V
VCE=-65V; IB=0
VCE=-45V; IB=0
VCE=-25V; IB=0
Collector-emitter
saturation voltage
VCEsat
-1.0
V
VBE-1
VBE-2
ICEO
Base-emitter on voltage
Ba-emitter on voltage
Collector cut-off current
-2.0
3.0
-1.0
V
V
2N5954
2N5955
2N5956
mA
V
CE=Rated VCE; VBE(off)=1.5V
-0.1
-2.0
ICEV
IEBO
Collector cut-off current(RBE=100Ω)
Emitter cut-off current
2N5954
mA
mA
TC=150℃
VEB=-5V; IC=0
-0.1
IC=-2A ; VCE=-4V
hFE-1
DC current gain
20
100
2N5955
2N5956
IC=-2.5A ; VCE=-4V
IC=-3A ; VCE=-4V
hFE-2
fT
DC current gain
IC=-6A ; VCE=-4V
5
5
Transition frequency
IC=-1A;VCE=-4V;f=1.0MHz
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
2N5954 2N5955 2N5956
PACKAGE OUTLINE
Fig.2 outline dimensions
3
相关型号：
2N5956E3
Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
MICROSEMI
2N5956LEADFREE
Power Bipolar Transistor, 6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-66, Metal, 2 Pin, HERMETIC SEALED, METAL PACKAGE-2
CENTRAL
2N5958
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin,
MICROSEMI
2N5958E3
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, TO-61, Metal, 3 Pin,
MICROSEMI
2N5959E3
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin, TO-61, 3 PIN
MICROSEMI
2N5960
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Metal, 3 Pin,
MICROSEMI
©2020 ICPDF网 联系我们和版权申明