2N5878 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2N5878 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：118K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5877 2N5878
DESCRIPTION
·With TO-3 package
·Low collector saturation voltage
·Complement to type 2N5875 2N5876
APPLICATIONS
·For general-purpose power amplifier
and switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
60
UNIT
2N5877
2N5878
2N5877
2N5878
VCBO
Collector-base voltage
Open emitter
V
80
60
VCEO
Collector-emitter voltage
Open base
V
80
VEBO
IC
ICM
IB
Emitter-base voltage
Collector current
Open collector
5
V
A
10
Collector current-peak
Base current
20
A
4
A
PD
Tj
Total Power Dissipation
Junction temperature
Storage temperature
TC=25℃
150
200
-65~200
W
℃
℃
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
1.17
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5877 2N5878
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2N5877
2N5878
Collector-emitter
sustaining voltage
VCEO(SUS)
IC=0.2A ;IB=0
V
80
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage IC=5A;IB=0.5A
Collector-emitter saturation voltage IC=10A;IB=2.5A
1.0
3.0
2.5
1.5
0.5
V
V
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
IC=10A;IB=2.5A
IC=4A ; VCE=4V
VCB=ratedVCBO; IB=0
VCE=30V; IB=0
V
V
ICBO
mA
2N5877
Collector
ICEO
.0
mA
cuff current
2N5878
VCE=40V; IB=0
V
CE=ratedVCE; VBE=1.5
0.5
5.0
ICEX
IEBO
hFE-1
hFE-2
hFE-3
fT
Collector cut-off current
Emitter cut-off currnt
DC current gain
mA
mA
TC=150℃
VEB=5V; IC=0
1.0
IC=1A ; VCE=4V
35
20
4
DC current gain
IC=4A ; VCE=4V
100
DC current gain
IC=10A ; VCE=4V
Trainsistion frequency
IC=0.5A ; VCE=10V;f=1MHz
4
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2N5877 2N5878
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
3
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