首页 |元器件品牌

2N5879 [ISC]

Silicon PNP Power Transistors; 硅PNP功率晶体管
2N5879
型号： 2N5879
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon PNP Power Transistors
硅PNP功率晶体管

晶体 晶体管 开关 局域网
文件： 总3页 (文件大小：118K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N5879 2N5880  
DESCRIPTION  
·With TO-3 package  
·Low collector saturation voltage  
·Complement to type 2N5881 2N5882  
APPLICATIONS  
·For general-purpose power amplifier  
and switching applications  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Emitter  
Fig.1 simplified outline (TO-3) and symbol  
3
Collector  
Absolute maximum ratings(Ta=℃)  
SYMBOL  
PARAMETER  
CONDITIONS  
VALU
-60  
UNIT  
2N5879  
2N5880  
2N5879  
2N5880  
VCBO  
Collector-base voltage  
Open emitter  
V
-80  
-60  
VCEO  
Collector-emitter voltage  
Open base  
V
-80  
VEBO  
IC  
ICM  
IB  
Emitter-base voltage  
Collector current  
Open collector  
-5  
V
A
-15  
Collector current-peak  
Base current  
-30  
A
-5  
A
PD  
Tj  
Total Power Dissipation  
Junction temperature  
Storage temperature  
TC=25℃  
160  
150  
-65~200  
W
℃
℃
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
Thermal resistance junction to case  
VALUE  
UNIT  
Rth j-c  
1.1  
℃/W  
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N5879 2N5880  
CHARACTERISTICS  
Tj=25℃ unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
-60  
-80  
TYP.  
MAX  
UNIT  
2N5879  
2N5880  
Collector-emitter  
sustaining voltage  
VCEO(SUS)  
IC=-0.2A ;IB=0  
V
VCEsat-1  
VCEsat-2  
VBEsat  
VBE  
Collector-emitter saturation voltage  
Collector-emitter saturation voltage  
Base-emitter saturation voltage  
Base-emitter on voltage  
IC=-7A;IB=-0.7A  
-1.0  
-4.0  
-2.5  
-1.5  
-0.5  
V
V
IC=-15A;IB=-3.75A  
IC=-15A;IB=-3.75A  
IC=-6A ; VCE=-4V  
VCB=ratedVCBO; IB=0  
VCE=-30V; IB=0  
V
V
ICBO  
Collector cut-off current  
mA  
2N5879  
Coor cut-off current  
2N5880  
ICEO  
.0  
mA  
V
V
CE=-40V; IB=0  
CE=ratedVCE; VBE=-V  
-0.5  
-5.0  
ICEX  
IEBO  
hFE-1  
hFE-2  
hFE-3  
fT  
Collector cut-off current  
Emitter cut-off currnt  
DC current gain  
mA  
mA  
TC=150℃  
VEB=-5V; IC=0  
-1.0  
IC=-2A ; VCE=-4V  
IC=-6A ; VCE=-4V  
IC=-15A ; VCE=-4V  
IC=-1A ; VCE=-10V  
35  
20  
4
DC current gain  
100  
DC current gain  
Trainsistion frequency  
4
MHz  
2
Inchange Semiconductor  
Product Specification  
Silicon PNP Power Transistors  
2N5879 2N5880  
PACKAGE OUTLINE  
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)  
3

相关型号：

2N5879LEADFREE

 Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL

2N588

 TRANSISTOR | BJT | PNP | 15V V(BR)CEO | 50MA I(C) | TO-30
ETC

2N5880

 POWER TRANSISTORS(15A,160W)
MOSPEC

2N5880

 COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
BOCA

2N5880

 Silicon PNP Power Transistors
ISC

2N5880

 COMPLEMENTARY SILICON POWER TRANSISTORS
NJSEMI

2N5880

 Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
CENTRAL

2N5880

 Transistor
ASI

2N5880

 Power Bipolar Transistor, 15A I(C), 80V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI

2N5881

 POWER TRANSISTORS(15A,160W)
MOSPEC

2N5881

 COMPLEMENTARY SILICON HIGH-POWER TRANSISTORS
BOCA

2N5881

 Silicon NPN Power Transistors
ISC
©2020 ICPDF网 联系我们和版权申明