2N5740 [ISC]
isc Silicon PNP Power Transistors; ISC的硅PNP功率晶体管
| 型号： | 2N5740 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Power Transistors |
| 文件： | 总2页 (文件大小：55K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2N5740
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= -100V(Min.)
·Low Collector Saturation Voltage-
: VCE(sat)= -0.5V(Max.)@ IC= -5A
·Wide Area of Safe Operation
APPLICATIONS
·Designed for general-purpose power amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
VALUE
-100
-100
-5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
-10
A
ICM
-20
A
IB
-4
A
Collector Power Dissipation
@TC=100℃
PC
20
W
℃
℃
TJ
Junction Temperature
Storage Temperature
150
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Ambient
4.56
℃/W
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistors
2N5740
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
MAX
UNIT
V
VCEO(SUS)
Collector-Emitter Sustaining Voltage IC= -200mA ; IB= 0
-100
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
IC= -5A; IB= -0.5A
IC= -10A; IB= -2.5A
IC= -5A; IB= -0.5A
IC= -4A; VCE= -4V
VCE= -100V; IB= 0
VCB= -100V; IE= 0
VEB= -5V; IC= 0
-0.5
-3.0
-1.2
-1.5
-0.5
-0.1
-0.1
80
V
VCE
VCE
(sat)-1
(sat)-2
V
V
VBE(
)
sat
V
VBE(
)
on
ICEO
mA
mA
mA
ICBO
IEBO
hFE-1
hFE-2
fT
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
IC= -5A; VCE= -5V
IC= -10A; VCE= -5V
IC= -0.5A; VCE= -10V
20
4
DC Current Gain
Current-Gain—Bandwidth Product
10
MHz
2
isc Website：www.iscsemi.cn
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