2N5741 [JMNIC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | 2N5741 |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：43K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5741 2N5742
DESCRIPTION
·With TO-3 package
·Low collector-emitter saturation voltage
·Fast switching speed
APPLICATIONS
·For general–purpose switching
and power amplifier applications.
PINNING
PIN
DESCRIPTION
1
Base
2
3
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
Open emitter
VALUE
60
UNIT
2N5741
2N5742
2N5741
2N5742
VCBO
Collector-base voltage
V
100
60
VCEO
Collector-emitter voltage
Open base
V
100
5
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
20
PC
Tj
Collector power dissipation
Junction temperature
Storage temperature
TC=100℃
65
W
℃
℃
150
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
VALUE
UNIT
Rth j-c
Thermal resistance junction to case
0.875
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5741 2N5742
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX
UNIT
2N5741
2N5742
Collector-emitter
sustaining voltage
VCEO
IC=0.2A ;IB=0
V
100
VCEsat-1
VCEsat-2
VBEsat
VBE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
IC=10A; IB=1A
1.0
3.0
1.8
1.5
0.1
V
V
IC=20A ;IB=4A
IC=10A; IB=1A
V
IC=10A ; VCE=5V
VCB=Rated VCBO; IE=0
V
ICBO
mA
mA
mA
VCE= Rated VCEO; VBE(off)=1.5V
TC=150℃
0.5
5.0
ICEX
IEBO
VEB=5V; IC=0
1.0
80
hFE-1
hFE-2
fT
DC current gain
IC=10A ; VCE=5V
IC=20A ; VCE=5V
IC=1A ; VCE=10V
20
10
10
DC current gain
Transition frequency
MHz
JMnic
Product Specification
www.jmnic.com
Silicon PNP Power Transistors
2N5741 2N5742
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
JMnic
相关型号：
2N5741E3
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
2N5742
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
2N5742E3
Power Bipolar Transistor, 20A I(C), 100V V(BR)CEO, PNP, Silicon, TO-3, Metal, 2 Pin,
MICROSEMI
2N5743E3
Power Bipolar Transistor, 20A I(C), 60V V(BR)CEO, PNP, Silicon, TO-66, Metal, 2 Pin,
MICROSEMI
©2020 ICPDF网 联系我们和版权申明