2SC6053F [ISAHAYA]

Transistor;


型号：	2SC6053F
厂家：	ISAHAYA ELECTRONICS CORPORATION
描述：	Transistor 驱动
文件：	总4页 (文件大小：76K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

〈SMALL-SIGNAL TRANSISTOR〉

2SC6053

FOR HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

DESCRIPTION

OUTLINE DRAWING

Unit：ｍｍ

2SC6053 is a mini package resin sealed silicon NPN epitaxial

type transistor designed with high collector current, small VCE(sat).

2.5

1.5

0.5

①

②

FEATURE

●Super mini package for easy mounting

●High collector current I_C= 650mA

●Low collector to emitter saturation voltage

VCE(sat) = 0.5V max

③

APPLICATION

Small type motor drive, relay drive, power supply

TERMINAL CONNECTER

①：BASE

②：EMITTER

EIAJ ： SC-59

MAXIMUM RATINGS（Ta=25℃）

③：COLLECTOR

JEDEC ： TO-236 resemblance

Symbol

V_CBO

V_CEO

V_EBO

I _O

Parameter

Ratings

Unit

Collector to Base voltage

Collector to Emitter voltage

Emitter to Base voltage

Collector current

MARKING

650

℃

・ B F

P_c

Collector dissipation

Junction temperature

Storage temperature

150

T_j

＋150

-55～＋150

T_stg

ｈＦＥ ITEM

TYPE NAME

ELECTRICAL CHARACTERISTICS（Ta=25℃）

Limits

Parameter

Symbol

Test conditions

Unit

Min

Typ

Max

C to E break down voltage

C to B break down voltage

E to B break down voltage

Collector cut off current

Emitter cut off current

V_（BR）CEOIC=100μA、RBE=∞

V_（BR）CBOIC=10μA、IE=0

V_（BR）EBOIE=10μA、IC=0

I_CBO

I_EBO

VCB=25V、IE=0

VEB=2V、IC=0

μA

DC forward current gain

h_FE*

VCE=4V、IC=100mA

150

800

0.5

---

C to E saturation voltage

V_CE（sat）IC=500mA、IB=25mA

fT VCE=6V、IE=-10mA

0.3

Gain band width product

290

MHz

＊： It shows h_FEclassification in right table.

Item

hFE

150 to 300

250 to 500

400 to 800

ISAHAYA ELECTRONICS CORPORATION

〈SMALL-SIGNAL TRANSISTOR〉

2SC6053

FOR HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

TYPICAL CHARACTERISTICS

DC FORWARD CURRENT GAIN VS.

COLLECTOR CURRENT

COLLECTOR DISSIPATION VS.

AMBIENT TEMPERATURE

250

200

150

100

1000

100

Ta=25℃

VCE=4V

100

150

200

100

1000

AMBIENT TEMPERATUREꢀTa(℃)

COLLECTOR CURRENTꢀIC(mA)

COMMON EMITTER OUTPUT (2)

COMMON EMITTER OUTPUT (1)

400

800

600

400

200

IB=1.0mA

IB=0.9mA

IB=0.8mA

IB=9mA

Ta=25℃

IB=10mA

IB=8mA

IB=7mA

IB=6mA

300

200

100

IB=0.7mA

IB=0.6mA

IB=0.5mA

IB=5mA

IB=4mA

IB=3mA

IB=2mA

IB=0.4mA

IB=0.3mA

IB=1mA

IB=0.2mA

IB=0.1mA

IB=0mA

C TO E VOLTAGEꢀVCE(V)

COMMON EMITTER TRANSFER (1)

COMMON EMITTER TRANSFER (2)

800

600

400

200

Ta=25℃

VCE=4V

Ta=25℃

VCE=4V

0.2

0.4

0.6

0.8

0.2

0.4

0.6

0.8

B TO E VOLTAGE VBE(V)

ISAHAYA ELECTRONICS CORPORATION

〈SMALL-SIGNAL TRANSISTOR〉

2SC6053

FOR HIGH CURRENT DRIVE APPLICATION

SILICON NPN EPITAXIAL TYPE

TYPICAL CHARACTERISTICS

C TO E SATURATION VOLTAGE VS.

COLLECTOR CURRENT

GAIN BAND WIDTH PRODUCT VS.

EMITTER CURRENT

1000

500

400

300

200

100

Ta=25℃

VCE=6V

Ta=25℃

IC/IB=20

100

-1

-10

EMITTER CURRENTꢀIE (mA)

-100

100

1000

COLLECTOR CURRENTꢀIC(mA)

ISAHAYA ELECTRONICS CORPORATION

Marketing division, Marketing planning department

6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan

^Keep·I^sS^aA^fH^etA^yY^fA^irE^stleⁱcⁿtr^yon^oi^ucs^{r c}Cⁱo^rr^cp^uoⁱr^ta^dtio^en^sip^guⁿts^s!the maximum effort into making semiconductor products better and more reliable, but

there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or

property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures

such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or

mishap.

Notes regarding these materials

·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the

customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging

·^IIS^SA^AH^HA^AY^YA^{A o}E^rle^thcⁱt^rr^don^pi^ac^rs^tyC^.orporation assumes no responsibility for any damage, or infringement of any third party's rights ,

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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice

due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics

Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed

·^hIS^eA^reHⁱⁿA^.YA Electronics Corporation products are not designed or manufactured for use in a device or system that is used

under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an

authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,

·T^suh^ce^hp^ari^sor^aw^ppri^att^re^an^tua^sp^opr^ro^sv^ya^sl^teof^mI^sSA^foH^rA^trY^aA^nsE^pl^oe^rc^tt^ar^to^ionⁿic^,s^veC^hoⁱr^cp^uo^lara^r,ti^mon^edis^icn^ae^l,c^ae^es^rs^oa^sr^py^at^co^er^,eⁿp^uri^cn^lt^eao^rr^,r^oe^rp^uroⁿd^du^ec^rse^ei^an ^rw^eh^po^el^ae^teo^rr^uin^sep^.art these

·I^mf ^ath^tee^rs^iae^lsp^.roducts or technologies are subject to the Japanese export control restrictions, they must be exported under a

license from the Japanese government and cannot be imported into a country other than the approved destination. Any

diversion or re-export contrary to the export control laws and regulations of Japan and/or the country of destination is

·P^prle^oa^hs^ibe^itec^do^.ntact ISAHAYA Electronics Corporation or authorized ISAHAYA products distributor for further details on these

materials or the products contained therein.

Jan.2003

2SC6053F [ISAHAYA]

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