2SC6053G [ISAHAYA]
Transistor;型号: | 2SC6053G |
厂家: | ISAHAYA ELECTRONICS CORPORATION |
描述: | Transistor 驱动 |
文件: | 总4页 (文件大小:76K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
〈SMALL-SIGNAL TRANSISTOR〉
2SC6053
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
DESCRIPTION
OUTLINE DRAWING
Unit:mm
2SC6053 is a mini package resin sealed silicon NPN epitaxial
type transistor designed with high collector current, small VCE(sat).
.
2.5
1.5
0.5
0.5
①
②
FEATURE
●Super mini package for easy mounting
●High collector current IC = 650mA
●Low collector to emitter saturation voltage
VCE(sat) = 0.5V max
③
APPLICATION
Small type motor drive, relay drive, power supply
TERMINAL CONNECTER
①:BASE
②:EMITTER
EIAJ : SC-59
MAXIMUM RATINGS(Ta=25℃)
③:COLLECTOR
JEDEC : TO-236 resemblance
Symbol
VCBO
VCEO
VEBO
I O
Parameter
Ratings
Unit
V
Collector to Base voltage
Collector to Emitter voltage
Emitter to Base voltage
Collector current
25
MARKING
20
4
V
V
650
mA
mW
℃
℃
・ B F
Pc
Collector dissipation
Junction temperature
Storage temperature
150
Tj
+150
-55~+150
Tstg
hFE ITEM
TYPE NAME
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Limits
Parameter
Symbol
Test conditions
Unit
Min
20
25
4
Typ
Max
C to E break down voltage
C to B break down voltage
E to B break down voltage
Collector cut off current
Emitter cut off current
V(BR)CEO IC=100μA、RBE=∞
V(BR)CBO IC=10μA、IE=0
V(BR)EBO IE=10μA、IC=0
V
V
V
ICBO
IEBO
VCB=25V、IE=0
VEB=2V、IC=0
1
1
μA
μA
DC forward current gain
hFE *
VCE=4V、IC=100mA
150
800
0.5
---
V
C to E saturation voltage
VCE(sat) IC=500mA、IB=25mA
fT VCE=6V、IE=-10mA
0.3
Gain band width product
290
MHz
*: It shows hFE classification in right table.
Item
hFE
E
F
G
150 to 300
250 to 500
400 to 800
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
2SC6053
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
DC FORWARD CURRENT GAIN VS.
COLLECTOR CURRENT
COLLECTOR DISSIPATION VS.
AMBIENT TEMPERATURE
250
200
150
100
50
1000
100
10
Ta=25℃
VCE=4V
0
1
0
50
100
150
200
1
10
100
1000
AMBIENT TEMPERATUREꢀTa(℃)
COLLECTOR CURRENTꢀIC(mA)
COMMON EMITTER OUTPUT (2)
COMMON EMITTER OUTPUT (1)
400
800
600
400
200
0
IB=1.0mA
IB=0.9mA
IB=0.8mA
IB=9mA
Ta=25℃
IB=10mA
IB=8mA
IB=7mA
IB=6mA
300
200
100
0
IB=0.7mA
IB=0.6mA
IB=0.5mA
IB=5mA
IB=4mA
IB=3mA
IB=2mA
IB=0.4mA
IB=0.3mA
IB=1mA
IB=0.2mA
IB=0.1mA
IB=0mA
IB=0mA
0
4
8
12
16
20
0
1
2
3
4
5
C TO E VOLTAGEꢀVCE(V)
C TO E VOLTAGEꢀVCE(V)
COMMON EMITTER TRANSFER (1)
COMMON EMITTER TRANSFER (2)
800
600
400
200
0
10
Ta=25℃
VCE=4V
Ta=25℃
VCE=4V
8
6
4
2
0
0
0.2
0.4
0.6
0.8
1
0
0.2
0.4
0.6
0.8
1
B TO E VOLTAGE VBE(V)
B TO E VOLTAGE VBE(V)
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
2SC6053
FOR HIGH CURRENT DRIVE APPLICATION
SILICON NPN EPITAXIAL TYPE
TYPICAL CHARACTERISTICS
C TO E SATURATION VOLTAGE VS.
COLLECTOR CURRENT
GAIN BAND WIDTH PRODUCT VS.
EMITTER CURRENT
1000
500
400
300
200
100
0
Ta=25℃
VCE=6V
Ta=25℃
IC/IB=20
100
10
1
-1
-10
EMITTER CURRENTꢀIE (mA)
-100
1
10
100
1000
COLLECTOR CURRENTꢀIC(mA)
ISAHAYA ELECTRONICS CORPORATION
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
Keep·IsSaAfHetAyYfAirEstleicntryonoiucsr cCiorrcpuoirtadtioensipguntss!the maximum effort into making semiconductor products better and more reliable, but
there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or
property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures
such as (1) placement of substitutive, auxiliary, (2) use of non-farmable material or (3) prevention against any malfunction or
mishap.
Notes regarding these materials
·These materials are intended as a reference to our customers in the selection of the ISAHAYA products best suited to the
customer’s application; they don't convey any license under any intellectual property rights, or any other rights, belonging
·IISSAAHHAAYYAA oErlethcitrrdonpiacrstyC. orporation assumes no responsibility for any damage, or infringement of any third party's rights ,
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at the time of publication of these materials, and are subject to change by ISAHAYA Electronics Corporation without notice
due to product improvements or other reasons. It is therefore recommended that customers contact ISAHAYA Electronics
Corporation or an authorized ISAHAYA products distributor for the latest product information before purchasing product listed
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under circumstances in which human life is potentially at stake. Please contact ISAHAYA electronics corporation or an
authorized ISAHAYA products distributor when considering the use of a product contained herein for any specific purposes ,
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materials or the products contained therein.
Jan.2003
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