IRHNA58260 [IRF]

200V, N-CHANNEL; 200V N沟道

IRHNA58260


型号：	IRHNA58260
厂家：	INTERNATIONAL RECTIFIER
描述：	200V, N-CHANNEL 200V N沟道
文件：	总8页 (文件大小：109K)
下载：	下载PDF数据表文档文件

IRHNA58Z60

RADIATION HARDENED POWER MOSFET

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24 IRF

IRHNA58Z60

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT

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33 ETC

IRHNA58Z60

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA58Z60PBF

暂无描述

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0 IRF

IRHNA593064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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21 IRF

IRHNA593064SCS

Power Field-Effect Transistor,

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0 INFINEON

IRHNA593160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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14 IRF

IRHNA593160SCS

Power Field-Effect Transistor,

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0 INFINEON

IRHNA593260

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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12 IRF

IRHNA593260PBF

暂无描述

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0 IRF

IRHNA593260SCS

Power Field-Effect Transistor,

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0 INFINEON

IRHNA593Z60

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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9 IRF

IRHNA597064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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24 IRF

IRHNA597160

TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 52A I(D) | SMT

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22 ETC

IRHNA597160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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27 IRF

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