IRHNA58Z60PBF [INFINEON]
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厂家: | Infineon |
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ꢁ
PD - 91787H
IRHNA57Z60
JANSR2N7467U2
30V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-2)
REF: MIL5-PRF-19500/683
TECHNOLOGY
Product Summary
Part Number Radiation Level RDS(on)
ID
QPL Part Number
IRHNA57Z60 100K Rads (Si) 0.0035Ω 75A* JANSR2N7467U2
IRHNA53Z60 300K Rads (Si) 0.0035Ω 75A* JANSF2N7467U2
IRHNA54Z60 500K Rads (Si) 0.0035Ω 75A* JANSG2N7467U2
IRHNA58Z60 1000K Rads (Si) 0.0040Ω 75A* JANSH2N7467U2
SMD-2
International Rectifier’s R5TM technology provides
high performance power MOSFETs for space
applications. These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm2)). The combination
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low RDS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
of low R
and low gate charge reduces the
DS(on)
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
Units
I
@ V
@ V
= 12V, T = 25°C
Continuous Drain Current
75*
D
D
GS
GS
C
A
I
= 12V, T = 100°C Continuous Drain Current
75*
300
C
I
Pulsed Drain Current À
Max. Power Dissipation
DM
@ T = 25°C
P
250
W
W/°C
V
D
C
Linear Derating Factor
2.0
V
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
±20
GS
E
500
mJ
A
AS
I
75
AR
E
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
25
mJ
V/ns
AR
dv/dt
0.83
-55 to 150
T
J
oC
g
T
Storage Temperature Range
STG
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
3.3 (Typical)
* Current is limited by package
For footnotes refer to the last page
www.irf.com
1
04/24/06
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BV
Drain-to-Source Breakdown Voltage
30
—
—
—
—
V
V
= 0V, I = 1.0mA
D
DSS
GS
V/°C Reference to 25°C, I = 1.0mA
∆BV
/∆T Temperature Coefficient of Breakdown
0.026
DSS
J
D
Voltage
R
V
Static Drain-to-Source On-State
Resistance
—
—
0.0035
Ω
V
= 12V, I = 75A
DS(on)
GS D
Ã
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
2.0
45
—
—
—
—
—
4.0
—
10
25
V
V
= V , I = 1.0mA
GS(th)
fs
DS
GS
D
Ω
g
S ( )
V
≥ 15V, I
= 45A Ã
DS
V
DS
I
= 24V ,V =0V
DS GS
DSS
µA
—
V
= 24V,
DS
= 0V, T = 125°C
V
GS
J
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
200
55
V
= 20V
GSS
GS
nA
nC
V
= -20V
GSS
GS
Q
Q
Q
V
=12V, I = 45A
g
gs
gd
d(on)
r
GS D
V
= 15V
DS
40
t
t
t
t
35
V
= 15V, I = 45A,
DD D
V =12V, R = 2.35Ω
GS
125
80
G
ns
Turn-Off Delay Time
Fall Time
Total Inductance
d(off)
50
—
f
L
+ L
S
D
nH
Measured from the center of
drain pad to center of source pad
C
C
C
Input Capacitance
—
—
—
9110
4620
150
—
—
—
V
= 0V, V
= 25V
f = 1.0MHz
iss
GS DS
Output Capacitance
Reverse Transfer Capacitance
pF
oss
rss
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
Test Conditions
I
I
Continuous Source Current (Body Diode)
—
—
—
—
75*
S
A
Pulse Source Current (Body Diode) À
300
SM
V
t
Diode Forward Voltage
—
—
—
—
—
—
1.3
165
690
V
T = 25°C, I = 75A, V
= 0V Ã
j
SD
S
GS
Reverse Recovery Time
Reverse Recovery Charge
ns
T = 25°C, I = 45A, di/dt ≤ 100A/µs
j
rr
F
Q
nC
V
DD
≤ 25V Ã
RR
t
on
Forward Turn-On Time
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L + L .
S D
* Current is limited by package
Thermal Resistance
Parameter
Min Typ Max Units
Test Conditions
R
R
Junction-to-Case
Junction-to-PC board
—
—
—
1.6
0.5
—
thJC
thJ-PCB
°C/W
soldered to a 2” square copper-clad board
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
IRHNA57Z60, JANSR2N7467U2
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
Up to 500K Rads(Si)1 1000K Rads (Si)2 Units
Test Conditions
Min
Max
Min
Max
BV
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
30
2.0
—
—
4.0
30
1.5
—
—
—
—
—
4.0
V
V
= 0V, I = 1.0mA
D
DSS
GS
GS
V
V
= V , I = 1.0mA
GS(th)
DS
D
I
I
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
100
-100
10
100
V
GS
= 20V
GSS
nA
—
-100
25
V
GS
= -20 V
GSS
I
—
µA
V
=24V, V =0V
DS GS
DSS
R
DS(on)
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (SMD-2)
Diode Forward Voltage
Ã
—
0.004
0.0045
Ω
V
= 12V, I =45A
D
GS
R
DS(on)
Ã
—
0.0035
—
0.004
Ω
V
= 12V, I =45A
GS
D
V
SD
Ã
—
1.3
—
1.3
V
V
= 0V, I = 45A
GS S
1. Part numbers IRHNA57Z60 (JANSR2N7467U2), IRHNA53Z60 (JANSF2N7467U2) and IRHNA54Z60 (JANSG2N7467U2)
2. Part number IRHNA58Z60 (JANSH2N7467U2)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe OperatingArea
VDS (V)
Ion
LET
Energy
Range
(MeV/(mg/cm2)) (MeV)
(µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V
Cu
Br
I
28
37
60
261
285
344
40
37
33
30
30
25
30
30
25
30
30
20
25
23
15
15
15
8
35
30
25
20
15
10
5
Cu
Br
I
0
0
-5
-10
-15
-20
VGS
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
1000
1000
100
10
VGS
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
TOP
BOTTOM 5.0V
BOTTOM 5.0V
100
5.0V
5.0V
20µs PULSE WIDTH
°
T = 25 C
J
20µs PULSE WIDTH
°
T = 150 C
J
10
0.1
1
10
100
0.1
1
10
100
V
, Drain-to-Source Voltage (V)
V
, Drain-to-Source Voltage (V)
DS
DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
1000
2.0
=
75 A
I
D
°
T = 25 C
J
1.5
1.0
0.5
0.0
°
T = 150 C
J
100
V
=
25V
DS
V
=112V
20µs PULSE WIDTH
GS
10
5.0
5.5
6.0
6.5
7.0
7.5
8.0
-60 -40 -20
0
20 40 60 80 100 120 140 160
°
V
, Gate-to-Source Voltage (V)
T , Junction Temperature( C)
J
GS
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
4
www.irf.com
Pre-Irradiation
IRHNA57Z60, JANSR2N7467U2
20000
20
15
10
5
I
D
= 45 A
V
= 0V,
f = 1MHz
C SHORTED
ds
GS
V
V
= 24V
= 15V
C
= C + C
DS
DS
iss
gs
gd ,
C
= C
rss
gd
C
= C + C
gd
oss
ds
15000
10000
5000
0
C
oss
C
iss
FOR TEST CIRCUIT
SEE FIGURE 13
C
rss
0
1
10
100
0
25
50
75 100 125 150 175 200 225
V
, Drain-to-Source Voltage (V)
Q , Total Gate Charge (nC)
DS
G
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
°
T = 25 C
LIMITED BY R
(on)
J
DS
°
100
10
1
T = 150 C
100µs
1ms
J
100
10
1
10ms
Tc = 25°C
Tj = 150°C
Single Pulse
V
= 0 V
GS
3.0
0.1
0.0
0.5
1.0
1.5
2.0
2.5
3.5
0.1
1
10
100
V
,Source-to-Drain Voltage (V)
SD
V
, Drain-toSource Voltage (V)
DS
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
www.irf.com
5
IRHNA57Z60, JANSR2N7467U2
Pre-Irradiation
RD
250
VDS
LIMITED BY PACKAGE
VGS
D.U.T.
200
150
100
50
RG
+VDD
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 10a. Switching Time Test Circuit
V
DS
90%
0
25
50
75
100
125
150
°
T , Case Temperature ( C)
C
10%
V
GS
t
t
r
t
t
f
Fig 9. Maximum Drain Current Vs.
d(on)
d(off)
Case Temperature
Fig 10b. Switching Time Waveforms
1
D = 0.50
0.20
0.1
0.01
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
P
2
DM
t
1
t
2
Notes:
1. Duty factor D =
t / t
1
2. Peak T =P
x Z
+ T
C
J
DM
thJC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
t , Rectangular Pulse Duration (sec)
1
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6
www.irf.com
Pre-Irradiation
IRHNA57Z60, JANSR2N7467U2
1200
1000
800
600
400
200
0
I
D
TOP
34A
47A
15V
BOTTOM 75A
DRIVER
+
L
V
DS
D.U.T
.
R
G
V
DD
-
I
A
AS
V
2
GS
0.01
Ω
t
p
Fig 12a. Unclamped Inductive Test Circuit
25
50
75
100
125
150
°
Starting T , Junction Temperature ( C)
J
V
(BR)DSS
t
p
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I
AS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms
Same Type as D.U.T.
50KΩ
.2µF
12V
Q
G
.3µF
+
12 V
V
DS
D.U.T.
-
Q
Q
GD
GS
V
GS
V
G
3mA
I
I
D
G
Charge
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
Fig 13a. Basic Gate Charge Waveform
www.irf.com
7
IRHNA57Z60, JANSR2N7467U2
Footnotes:
Pre-Irradiation
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with V Bias.
À
Repetitive Rating; Pulse width limited by
maximum junction temperature.
GS
= 0 during
12 volt V
applied and V
DS
Á
V
= 25V, starting T = 25°C, L= 0.3mH
J
GS
irradiation per MIL-STD-750, method 1019, condition A.
DD
Peak I = 75A, V
= 12V
L
GS
Å Total Dose Irradiation with V
Bias.
 I
≤ 75A, di/dt ≤ 94A/µs,
DS
= 0 during
SD
DD
24 volt V
applied and V
GS
V
≤ 30V, T ≤ 150°C
DS
irradiation per MlL-STD-750, method 1019, condition A.
J
Case Outline and Dimensions — SMD-2
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 04/2006
8
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