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IRHNA57264SESCS [IRF]

Power Field-Effect Transistor, 49A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN;

IRHNA57264SESCS


元器件型号：	IRHNA57264SESCS
生产厂家：	INTERNATIONAL RECTIFIER
描述和应用：	Power Field-Effect Transistor, 49A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN
PDF文件：	总8页 (文件大小：181K)
下载文档：	下载PDF数据表文档文件
型号参数：IRHNA57264SESCS参数

IRHNA5760SE

TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 55A I(D) | SMT

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4 ETC

IRHNA57Z60

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT

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19 ETC

IRHNA57Z60

RADIATION HARDENED POWER MOSFET

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72 IRF

IRHNA57Z60

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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1 IRF

IRHNA57Z60SCS

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD2, 3 PIN

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0 INFINEON

IRHNA58064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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5 IRF

IRHNA58064

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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8 IRF

IRHNA58064PBF

Power Field-Effect Transistor, 75A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA58160

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-2)

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15 IRF

IRHNA58160PBF

Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

IRHNA58260

200V, N-CHANNEL

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8 IRF

IRHNA58260

200V, N-CHANNEL

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9 IRF

IRHNA58Z60

RADIATION HARDENED POWER MOSFET

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24 IRF

IRHNA58Z60

TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 75A I(D) | SMT

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33 ETC

IRHNA58Z60

Power Field-Effect Transistor, 75A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HERMETIC SEALED, CERAMIC, SMD-2, 3 PIN

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0 IRF

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